dc Conductivities

Mahan, G. D.

doi:10.1007/978-1-4757-5714-9_8

Many-Particle Physics 2000

DOI: 10.1007/978-1-4757-5714-9_8

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dc Conductivities

G. D. Mahan¹

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Cited by 3 publications

References 35 publications

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Characterization of Ambipolar GaSb/InAs Core–Shell Nanowires by Thermovoltage Measurements

et al. 2015

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In semiconductor heterostructures with a type II band alignment, such as GaSb-InAs, conduction can be tuned from electron- to hole-dominated using an electrostatic gate. However, traditional conductance measurements give no direct information on the carrier type, and thus limit the ability to distinguish transport effects originating from the two materials. Here, we employ thermovoltage measurements to GaSb/InAs core-shell nanowires, and reliably identify the dominant carrier type at room temperature as well as in the quantum transport regime at 4.2 K, even in cases where the conductance measurement does not allow for such a distinction. In addition, we show that theoretical modeling using the conductance data as input can reproduce the measured thermovoltage under the assumption that electron and hole states shift differently in energy with the applied gate voltage.

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Characterization of Ambipolar GaSb/InAs Core–Shell Nanowires by Thermovoltage Measurements

et al. 2015

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Low-temperature thermal transport and thermopower of monolayer transition metal dichalcogenide semiconductors

Sengupta¹,

Tan²,

Klimeck³

et al. 2017

J. Phys.: Condens. Matter

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We study the low temperature thermal conductivity of single-layer transition metal dichalcogenides (TMDCs). In the low temperature regime where heat is carried primarily through transport of electrons, thermal conductivity is linked to electrical conductivity through the Wiedemann-Franz law (WFL). Using a k.p Hamiltonian that describes the [Formula: see text] and [Formula: see text] valley edges, we compute the zero-frequency electric (Drude) conductivity using the Kubo formula to obtain a numerical estimate for the thermal conductivity. The impurity scattering determined transit time of electrons which enters the Drude expression is evaluated within the self-consistent Born approximation. The analytic expressions derived show that low temperature thermal conductivity (1) is determined by the band gap at the valley edges in monolayer TMDCs and (2) in presence of disorder which can give rise to the variable range hopping regime, there is a distinct reduction. Additionally, we compute the Mott thermopower and demonstrate that under a high frequency light beam, a valley-resolved thermopower can be obtained. A closing summary reviews the implications of results followed by a brief discussion on applicability of the WFL and its breakdown in context of the presented calculations.

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Interband Contribution to Thermoelectric Properties of Al–Cu–Ir Quasicrystalline Approximant

Kitahara

Kimura

2021

Mater. Trans.

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dc Conductivities

Cited by 3 publications

References 35 publications

Characterization of Ambipolar GaSb/InAs Core–Shell Nanowires by Thermovoltage Measurements

Characterization of Ambipolar GaSb/InAs Core–Shell Nanowires by Thermovoltage Measurements

Low-temperature thermal transport and thermopower of monolayer transition metal dichalcogenide semiconductors

Interband Contribution to Thermoelectric Properties of Al–Cu–Ir Quasicrystalline Approximant

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