DC-contact radio-frequency microelectromechanical system symmetric toggle switch on a borofloat substrate

Li, Ling; Hou, Zhihao; Zhao, Chenxu; Liu, Zewen

doi:10.1049/mnl.2013.0044

Cited by 5 publications

(2 citation statements)

References 12 publications

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“…The RF MEMS switch was an essential component for the miniaturization of reconfigurable attenuator. The compact, high performance, Au-Au contact series of RF MEMS switches, which were described in an earlier work [16], were integrated into the present 3-bit step attenuator. The switches were based on simple cantilever structure with an electrostatic actuation voltage of 20-30 V. From DC to 40 GHz, the switches exhibited excellent performance, with insertion loss and isolation better than 0.5 dB and 19 dB, respectively.…”

Section: Rf Mems Switch Designmentioning

confidence: 99%

A miniaturized reconfigurable broadband attenuator based on RF MEMS switches

Guo

Gong

Zhong

et al. 2016

J. Micromech. Microeng.

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Reconfigurable attenuators are widely used in microwave measurement instruments. Development of miniaturized attenuation devices with high precision and broadband performance is required for state-of-the-art applications. In this paper, a compact 3-bit microwave attenuator based on radio frequency micro-electro-mechanical system (RF MEMS) switches and polysilicon attenuation modules is presented. The device comprises 12 ohmic contact MEMS switches, π-type polysilicon resistive attenuation modules and microwave compensate structures. Special attention was paid to the design of the resistive network, compensate structures and system simulation. The device was fabricated using micromachining processes compatible with traditional integrated circuit fabrication processes. The reconfigurable attenuator integrated with RF MEMS switches and resistive attenuation modules was successfully fabricated with dimensions of 2.45 × 4.34 × 0.5 mm3, which is 1/1000th of the size of a conventional step attenuator. The measured RF performance revealed that the attenuator provides 10–70 dB attenuation at 10 dB intervals from 0.1–20 GHz with an accuracy better than ±1.88 dB at 60 dB and an error of less than 2.22 dB at 10 dB. The return loss of each state of the 3-bit attenuator was better than 11.95 dB (VSWR < 1.71) over the entire operating band.

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Section: Rf Mems Switch Designmentioning

confidence: 99%

A miniaturized reconfigurable broadband attenuator based on RF MEMS switches

Guo

Gong

Zhong

et al. 2016

J. Micromech. Microeng.

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“…The switch was fabricated on a four‐inch low‐loss Borofloat glass wafer covered by a 500 nm thick SiO 2 layer using the Tsinghua University metal‐contact switch process as shown in Fig. 4 [15]. First, a 400 nm thick Si 3 N 4 layer was deposited and patterned using the dry‐etching process to define the contact dimples (Fig.…”

Section: Fabricationmentioning

confidence: 99%

Multi‐contact radiofrequency microelectromechanical systems switch with power divider/combiner structure for high power applications

Gong

Zhang

Guo

et al. 2018

Micro & Nano Letters

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Design, fabrication, and measurement of a metal-contact radiofrequency (RF) microelectromechanical systems switch with a power divider/combiner structure for high power applications are presented in this work. The multi-contact switch with parallel cantilever beams is implemented in a Y-junction power divider/combiner, which suppresses the uneven current distribution through each contact and results in higher power handling capability at high frequency. The measurement results indicate the excellent RF performance of the switch fabricated on the Borofloat glass substrate with insertion loss and isolation of 0.22 dB and 29 dB@10 GHz, respectively. A lumpedelement model is developed and it fits well with the measured S-parameters with the contact resistance of 0.6 Ω and up-state capacitance of 1 fF for each contact. The switch can handle power up to 2 W@10 GHz under prolonged hold-down conditions for 2 h. The reliability measurement shows that the packaged switch can operate for over 1 million cycles at 200 mA under cold-switching conditions.

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A Micromachined Reconfigurable Attenuator

Liu¹,

Guo²

2017

Toxinology

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As the essential power control and adjustment component, microwave power attenuator has been widely applied in spectrum analyzer, network analyzer, receivers, and other microwave instrument systems. There has been significant interest in developing miniaturized microwave devices with small geometric dimension for commercial microwave test systems. Traditional attenuator with large size is difficult to integrate with IC due to its cumbersome mechanical relay or switches. Radio frequency microelectromechanical system (RF MEMS) switches present many advantages such as less insertion loss, higher isolation, better linearity, and lower power consumption and more importantly, its small size. It has absorbed great attention for the purpose of miniaturization of attenuator. Recent research shows step attenuator based on RF MEMS switches meet well the state-of-the-art requirements of miniaturized reconfigurable attenuation devices with high precision and broadband performance. In this chapter, we introduce a compact 3-bit step attenuator based on RF MEMS switches with 0~70 dB attenuation at 10 dB intervals up to 20GHz. The on-chip attenuator consists of 12 ohmic MEMS switches, 3 π-type resistive attenuation networks, and microwave compensate structures. To optimize the attenuation characteristics within the broadband, theoretical analysis and 3D modelling were performed. The device was obtained using MEMS process combined with polysilicon integrated circuit (IC) process. In section "Structure Design," the structure of the step attenuator was proposed and three modules were designed independently including: (1) Resistive attenuation network. Two approaches are presented and discussed. (a) Polysilicon thin film resistor with symmetric topology is applied to realize the high-precision π-type resistive attenuation modules (10, 20, 40 dB). (b) Distributed TaN single

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DC-contact radio-frequency microelectromechanical system symmetric toggle switch on a borofloat substrate

Cited by 5 publications

References 12 publications

A miniaturized reconfigurable broadband attenuator based on RF MEMS switches

A miniaturized reconfigurable broadband attenuator based on RF MEMS switches

Multi‐contact radiofrequency microelectromechanical systems switch with power divider/combiner structure for high power applications

A Micromachined Reconfigurable Attenuator

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