DC Current-crowding estimation for SiGe:C heterojunction bipolar transistors

Ramírez‐García, Eloy; Garduño-Nolasco, E.; Rodriguez-Mendez, Luis M.; Diaz-Albarran, L.M.; Valdez-Pérez, Donato; Galaz-Larios, Martha; Aniel, F.; Zerounian, N.; Enciso-Aguilar, M.

doi:10.1016/j.sse.2018.12.010

Cited by 1 publication

(1 citation statement)

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“…Through recent years, the expanding usage of information and communication technologies (ICT), has caused an exponential acceleration to develop improvements in telecommunication technologies. Which is possible due to various electronic devices, but even more in particular to the field effect transistors (FETs) (Ramirez-Garcia et al, 2019;Garg et al, 2020;Navaneetha & Bikshalu, 2021). The use of these kinds of electronic devices allows the development of reliable circuits, which can differ in operation speeds, and with low production costs.…”

Section: Introductionmentioning

confidence: 99%

Novel Frequency Dependent OFET Attenuator Using ClInPc with Al2O3 Embedded Nanoparticles in Nylon 11 for Flexible Electronics

Hamui,

Sánchez-Vergara,

Ferrer-Garcia

2023

JART

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The Organic field-effect transistors (OFETs) have been largely investigated due to their low-cost manufacturing, flexibility, and lightweight, as well as their optical and electrical characteristics. That allow its application in sensors, amplifiers, attenuators signal filtering, and high-frequency response devices, like biosensing, wearable electronics, optoelectronics, telecommunications, and other potential applications. Throughout this investigation, a ClInPc flexible OFET with Al2O3 embedded particles in nylon 11, was manufactured and characterized to evaluate the optoelectronic and morphological properties. For the manufacturing, a high-vacuum thermal evaporation deposition technique was used, and UV-vis spectroscopy analysis and scanning electron microscopy were conducted to evaluate the optoelectronic and morphological properties. Also, a study regarding the electrical characteristics for different time-dependent wavefunction input signals, changing the input voltage and frequency, has been conducted. The latter was driven to determine the time-response characteristics, gains, phase shift and to determine whether the device function as an attenuator or an amplifier with the selected configuration. The device has been modelled to obtain the OFET operation parameters. A resulting capacitance of 567 pF was calculated. Uniform and continuous films where obtained, which guarantees an efficient charge transport. For all signals the output voltage is lower than that of the input voltage. Also, for the higher frequency the output voltage is decreased compared to lower frequencies. Gains decreasing variation of up to 0.05 indicate the operating application as an attenuator. Phase variation of up to 100 °, resulted while varying the input frequency. The model resulted on a gate capacitance value between 500 and 1180 pF, and gate-drain capacitance value between 50 and 500 pF. All of this could give evidence that state of the art ClInPc flexible OFET device with Al2O3 embedded nanoparticles in nylon 11 could be used toward current high-performance frequency-dependent flexible applications.

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Section: Introductionmentioning

confidence: 99%