DC Detection of Ferromagnetic Resonance in Thin Nickel Films

Egan, Walter G.; Juretschke, H. J.

doi:10.1063/1.1729604

Cited by 64 publications

(53 citation statements)

References 13 publications

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“…Excitation of ferromagnetic resonance (FMR) in ferromagnetic metals (FM) results in several interesting spin-charge effects, such as a change in electrical resistance [1][2][3][4][5][6], appearance of dc electromotive force (the resonance e.m.f. effect) [1,2,[7][8][9][10], and flowing of pure spin current across the interface of FM with adjacent non-magnetic ("normal") metal (NM) [9,[11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

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Resonance spin–charge phenomena and mechanism of magnetoresistance anisotropy in manganite/metal bilayer structures

Ацаркин¹,

Sorokin²,

Borisenko³

et al. 2016

J. Phys. D: Appl. Phys.

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The dc voltage generated under ferromagnetic resonance has been studied in bilayer structures based on manganite thin epitaxial films La 0.67 Sr 0.33 MnO 3 (LSMO) and non-magnetic metals (Au, Pt, and SrRuO 3 ) in the temperature range up to the Curie point. The effect is shown to be caused by two different phenomena: (1) the resonance dc electromotive force related to anisotropic magnetoresistance (AMR) in the manganite film and (2) pure spin current (spin pumping) registered by means of the inverse spin Hall effect in normal metal. The two phenomena were separated using the angular dependence of the effect, the external magnetic field H 0 being rotated in the film plane. It was found that the AMR mechanism in the manganite films differs substantially from that in traditional ferromagnetic metals being governed by the colossal magnetoresistance together with the in-plane magnetic anisotropy. The spin pumping effect registered in the bilayers was found to be much lower than that reported for common ferromagnets; possible reasons are discussed.

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Section: Introductionmentioning

confidence: 99%

“…effect) [1,2,[7][8][9][10], and flowing of pure spin current across the interface of FM with adjacent non-magnetic ("normal") metal (NM) [9,[11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Resonance spin–charge phenomena and mechanism of magnetoresistance anisotropy in manganite/metal bilayer structures

Ацаркин¹,

Sorokin²,

Borisenko³

et al. 2016

J. Phys. D: Appl. Phys.

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“…1 Since the conductances of the Pd and Fe 3 Si layers are in parallel to each other, the electromotive force generated in the Fe 3 Si layer is also detected. Although the anisotropic magnetoresistance (AMR) effect can produce signals with a Lorentzian line shape in the V EMF -H curve, 23 the  H dependence of V ISHE induced by the AMR is quite different from that shown in Fig. 1(e).…”

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confidence: 87%

Giant enhancement of spin pumping efficiency using Fe3Si ferromagnet

et al. 2013

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Spincurrentronics, which involves the generation, propagation and control of spin currents, has attracted a great deal of attention because of the possibility of realizing dissipation-free information propagation. Whereas electrical generation of spin currents originally made the field of spincurrentronics possible, and significant advances in spin-current devices has been made, novel spin-current-generation approaches such as dynamical methods have also been vigorously investigated. However, the low spin-current generation efficiency associated with dynamical methods has impeded further progress towards practical spin devices. Here we show that by introducing a Heusler-type ferromagnetic material, Fe 3 Si, pure spin currents can be generated about twenty times more efficiently using a dynamical method. This achievement paves the way to the development of novel spin-based devices.A central issue with respect to the practical application of spintronic devices is to establish a mechanism for highly efficient spin-current generation. 1 The development of magnetic tunnel junctions with single-crystal MgO barriers has addressed this challenge, 2,3 resulting in applications in magnetic heads and magnetoresistive random access memory. The electrical spin-injection from ferromagnetic materials (FM) into nonmagnetic materials (NM) is also in a similar situation. 4,5 The use of a tunnel barrier in order to overcome the conductance mismatch problem, 6 and the use of half-metal materials as spin injectors have also been proposed. 7 While steady progress has been made in the application of electrical methods for spin-current generation in spintronics devices, recent studies have also focused on more radical approaches such as dynamical, [8][9][10][11][12][13][14][15][16] thermal, 17 and acoustic 18 methods. These methods are expected to pave the way for a new generation of novel spintronics devices that involve no charge current. Spin pumping is a dynamical method in which a spin current is generated by a precession of the magnetization. It has been the subject of considerable interest because a spin current can be produced over a large area without the presence of a charge current, which is expected to reduce the problem of conductance mismatch. 13 Whereas, spin pumping is a promising technique for a next generation spin current devices, low efficiency of generation of pure spin current impedes further progress towards practical spin devices, unfortunately. For this reason, identifying a novel FM material that is capable of highly efficient spin injection is of the utmost importance. Here, we focus on single-crystal Fe 3 Si, which has desirable properties such as a smaller damping constant and a larger resistivity than those for Ni 80 Fe 20 (Py), the most commonly used spin source. 19 Moreover, high-quality single-crystal Fe 3 Si can be easily grown on semiconducting substrates such as Si, Ge and GaAs with atomically flat interfaces. [19][20][21] This means that Fe 3 Si can be applied to a wide variety of materials, al...

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“…4(d)) can be excited into a uniform precession by a transverse spin current generated by a longitudinal charge current flowing in the Pt layer [16,30]. The resonance can be detected either (i) electrically by measuring a small rectified dc voltage, which appears at resonance when the longitudinal ac current mixes with the oscillating resistance of the magnet (controlled by AMR effect) [6,7], or (ii) by the Brillouin light scattering (BLS) technique [30] which probes the dynamic magnetization.…”

Section: Smentioning

confidence: 99%

“…Interestingly, instead of detecting small variations in the absorption signal one can simply measure a dc voltage which appears across the sample at resonance when an ac (microwave) current is applied directly through the sample. This voltage is the result of the rectification processes in which the oscillating magnetic moments affect the electric current flow via, e.g., extraordinary Hall effect and/or anisotropic magnetoresistance [6][7][8][9]. In addition to greatly simplifying the detection of FMR, the applied ac current can be used as the driving force of FMR via the so-called spin-transfer torque (STT) effect.…”

Section: Introductionmentioning

confidence: 99%

Ferromagnetic resonance driven by an ac current: A brief review

Wang

Seinige

Tsoi

2013

Low Temperature Physics

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Excitation of ferromagnetic resonance (FMR) by an ac current has been observed in macroscopic ferromagnetic films for decades and typically relies on the ac Oersted field of the current to drive magnetic moments into precession and classical rectification of ac signals to detect the resonance. Recently, current-driven ferromagnetic resonances have attracted renewed attention with the discovery of the spin-transfer torque (STT) effect due to its potential applications in magnetic memory and microwave technologies. Here STT associated with the ac current is used to drive magnetodynamics on the nanoscale that enables FMR studies in sample volumes smaller by a factor of 1000 compared to conventional resonance techniques. In this paper, we briefly review the basics of

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DC Detection of Ferromagnetic Resonance in Thin Nickel Films

Cited by 64 publications

References 13 publications

Resonance spin–charge phenomena and mechanism of magnetoresistance anisotropy in manganite/metal bilayer structures

Resonance spin–charge phenomena and mechanism of magnetoresistance anisotropy in manganite/metal bilayer structures

Giant enhancement of spin pumping efficiency using Fe3Si ferromagnet

Ferromagnetic resonance driven by an ac current: A brief review

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