DC electric field dependence for the dielectric permittivity in antiferroelectric and ferroelectric states

Wang, Jinfei; Yang, Tongqing; Chen, Shengchen; Yao, Xi; Peláiz‐Barranco, A.

doi:10.1016/j.jallcom.2013.10.251

Cited by 21 publications

(6 citation statements)

References 16 publications

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“…Whereas at lower E , P m increases as T increases. Similar phenomena have also been observed in other AFE materials . The microscopic electric dipoles can be employed to explain this AFE behavior.…”

Section: Resultssupporting

confidence: 80%

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Electric field tunable thermal stability of energy storage properties of PLZST antiferroelectric ceramics

et al. 2017

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The electrical hysteresis behaviors and energy storage performance of Pb0.97La0.02(Zr0.58Sn0.335Ti0.085)O3 antiferroelectric (AFE) ceramics were studied under the combined effects of electric field and temperature. It was observed that the temperature dependence of recoverable energy density (Wre) of AFE ceramics depends critically on the applied electric field. While Wre at lower electric fields (<8 kV/mm) shows increasing tendency with increasing temperature from 20°C to 100°C, Wre at higher electric fields (>8 kV/mm) demonstrates decreasing dependence. There exists an appropriate electric field (8 kV/mm) under which the AFE ceramics exhibit nearly temperature‐independent Wre (the variation is less than 0.5% per 10°C). The underlying physical principles were also discussed in this study. These results indicate that the temperature dependence of Wre of AFE materials can be tuned through selecting appropriate electric fields and provide an avenue to obtain thermal stable energy storage capacitors, which should be of great interest to modern energy storage community.

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Section: Resultssupporting

confidence: 80%

“…Similar phenomena have also been observed in other AFE materials. [19][20][21][22] The microscopic electric dipoles can be employed to explain this AFE behavior. It is known that in AFE phase the neighboring electric dipoles are aligned in opposite orientations.…”

Section: Resultsmentioning

confidence: 99%

Electric field tunable thermal stability of energy storage properties of PLZST antiferroelectric ceramics

et al. 2017

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“…The pre-annealed permittivity for PZT is approximately 200 according to our experimental result [11]. The post-annealing permittivity of the strontium-modified PZT even reaches the thousands scale [26], which is absolutely enough for HKTMOS. PZT could be filled inside of the trench by the Sol-Gel method and is capable of withstanding high temperatures for the silicon process, which is a possible solution for HKTMOS fabrication.…”

Section: Fabrication and Materials Considerationmentioning

confidence: 64%

Investigation of a Novel High-Permittivity Trench MOS Device with Small Figures of Merit

Li¹,

Xiao²

2018

IJCTE

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We propose a vertical high-permittivity trench power metal oxide semiconductor (HKTMOS) device with an alternating N&P drift regions and high-permittivity (HK) trench sandwiched in between. The unique structure guarantees uniform potential distribution for a wide voltage range at the blocking state owing to both the HK potential modulation effect and the superjunction (SJ) charge balance. The specific on-resistance (R ons ) of HKTMOS is orders of magnitude lower than the SJ counterparts in the on-state because of the strong accumulation effect brought by the HK trenches. Although the gate charges also significantly rise because of the accumulation, the figures of merit (FOM) of HKTMOS still decrease considerably compared to the SJ under the same device length condition. An expression for the FOM is derived, demonstrating that the FOM of HKTMOS is proportional to the square of the HK trench depth, which agrees with the simulation results well. The simulation indicates that within the BV range of 500~2000 V, the R ons of HKTMOS is 1~2 orders of magnitude lower than that of SJ, and its FOM is 17.4%~44.1% that of SJ under the same device size condition. Furthermore, HKTMOS also demonstrates better charge imbalance tolerance than SJ.Index Terms-High permittivity, figures of merit, specific on resistance, power MOS.

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“…The increasing of dielectric constant is associated to the antipolar dipole reorientation. For FEs, the dielectric constant would decrease when the DC electric field increases as the film would transform toward a single domain state, resulting a decrease in the number of domain walls [85]. It should be noted that the decreasing trend of dielectric constant in FE relies on the DC field direction.…”

Section: Electric Field Induced Transitionsmentioning

confidence: 99%

Antiferroelectric oxide thin-films: Fundamentals, properties, and applications

Si,

Zhang,

Liu

et al. 2024

Progress in Materials Science

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DC electric field dependence for the dielectric permittivity in antiferroelectric and ferroelectric states

Cited by 21 publications

References 16 publications

Electric field tunable thermal stability of energy storage properties of PLZST antiferroelectric ceramics

Electric field tunable thermal stability of energy storage properties of PLZST antiferroelectric ceramics

Investigation of a Novel High-Permittivity Trench MOS Device with Small Figures of Merit

Antiferroelectric oxide thin-films: Fundamentals, properties, and applications

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