DC Gate Leakage Current Model Accounting for Trapping Effects in AlGaN/GaN HEMTs

Rodríguez, R.; González, B.; Garcı́a, Javier; Toulon, Gaëtan; Morancho, Frédéric; Núñez, Antonio

doi:10.3390/electronics7100210

Cited by 9 publications

(7 citation statements)

References 28 publications

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“…Thus, the difference between measured and simulated subthreshold current is reduced in more than five orders of magnitude. In an off-state regime, gate and drain measured currents coincide with all leakage current flowing through the gate being collected by the drain terminal, across the GaN channel [25].…”

Section: Tcad Resultsmentioning

confidence: 66%

Numerical Simulation for DC Schottky Gate Leakage Current in AlGaN/GaN HEMTs

Rodríguez

González

Garcı́a

et al. 2018

2018 Spanish Conference on Electron Devices (CDE)

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Section: Tcad Resultsmentioning

confidence: 66%

Numerical Simulation for DC Schottky Gate Leakage Current in AlGaN/GaN HEMTs

Rodríguez

González

Garcı́a

et al. 2018

2018 Spanish Conference on Electron Devices (CDE)

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“…The positive Vth shift has been extensively studied and was attributed to the electron passing through the Schottky contact, e.g. via Frenkel-Poole emission (FPE) [22], and charge-trapping effects [23] occurred in the AlGaN barrier and the whole device surface due to the same potential difference for gate-source terminals and gate-drain terminals [13], [24]. While in a recovery experiment [Fig.…”

Section: Resultsmentioning

confidence: 99%

Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K

Wang¹,

Gu²,

Lü

et al. 2020

IEEE J. Electron Devices Soc.

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Dynamic characteristics of GaN HEMT grown on a native substrate were systematically investigated at 300K and 150K. Transfer and output characteristics of the GaN HEMT were measured after various off-state stressing conditions and recovery durations. In addition, a high-speed scheme was employed to finish the measurement within 75 μs, and to ensure maximum preservation of stressing/recovery consequences. The threshold voltage instability and current collapse commonly observed at room temperature were mostly diminished at 150K, which was attributed to reduced number of electrons through the metal-semiconductor contact and insufficient number of carriers overcoming the capture potential barrier. Two pulsed I-V measurements, including evaluations with various off-state quiescent bias points and "on-the-fly" on-resistance sampling, confirmed an inefficient electron capture process at 150K, with a time constant larger than dozens of seconds. The output characteristic comparison between hard switch and soft switch at 150K provided direct experimental evidence for electron capture promotion by hot carriers.

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“…However, thanks to the benefits of wide band gap technology, some of these challenges will soon be overcome if more research goes into solving the respective problems. Recently, the field of power electronic devices has awakened to the wide band gap technology and this has resulted in the birthing of the high electron mobility transistors (HEMTs) [ 149 , 150 , 151 , 152 , 153 , 154 , 155 , 156 , 157 , 158 , 159 , 160 , 161 , 162 , 163 , 164 , 165 , 166 , 167 , 168 , 169 , 170 ]. These transistors, mostly MOSFETs and IGBTs, are made from materials such as silicon carbide (SiC), gallium nitride (GaN), indium phosphide (InP), aluminum gallium nitride (AlGaN), etc.…”

Section: Discussionmentioning

confidence: 99%

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

Jiya

Gouws

2020

Micromachines

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As the need for green and effective utilization of energy continues to grow, the advancements in the energy and power electronics industry are constantly driven by this need, as both industries are intertwined for obvious reasons. The developments in the power electronics industry has over the years hinged on the progress of the semiconductor device industry. The semiconductor device industry could be said to be on the edge of a turn into a new era, a paradigm shift from the conventional silicon devices to the wide band gap semiconductor technologies. While a lot of work is being done in research and manufacturing sectors, it is important to look back at the past, evaluate the current progress and look at the prospects of the future of this industry. This paper is unique at this time because it seeks to give a good summary of the past, the state-of-the-art, and highlight the opportunities for future improvements. A more or less ‘forgotten’ power electronic switch, the four-quadrant switch, is highlighted as an opportunity waiting to be exploited as this switch presents a potential for achieving an ideal switch. Figures of merit for comparing semiconductor materials and devices are also presented in this review.

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DC Gate Leakage Current Model Accounting for Trapping Effects in AlGaN/GaN HEMTs

Cited by 9 publications

References 28 publications

Numerical Simulation for DC Schottky Gate Leakage Current in AlGaN/GaN HEMTs

Numerical Simulation for DC Schottky Gate Leakage Current in AlGaN/GaN HEMTs

Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

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