DC Magnetic Field Sensitivity Optimization of Spin Defects in Hexagonal Boron Nitride

Zhou, Feifei; Jiang, Zhengzhi; Liang, Haidong; Ru, Shihao; Bettiol, Andrew A.; Gao, Weibo

doi:10.1021/acs.nanolett.3c01881

Cited by 10 publications

(6 citation statements)

References 37 publications

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“…For hBN defects themselves, a negative boron vacancy (V −1 B ) defect in hBN has been extensively demonstrated for active ODMR. [60][61][62] This hBN potential can then be expanded to all quantum applications. However, a more in-depth investigation into ODMR is beyond the scope of this work.…”

Section: Compatibility Of Hbn Defects In Global Quantum Networkmentioning

confidence: 99%

Theoretical investigation of fluorescent defects in hexagonal boron nitride and their applications in quantum technologies

Cholsuk,

Cakan,

Suwana

et al. 2024

Quantum Technologies 2024

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Optical quantum technologies, especially quantum communication, yield higher potential with a network of many integrated quantum systems. Compatibility among each component is then essential. A single quantum system that can be used for different building blocks is ideal, as it automatically ensures a highly efficient interface between the different components. Fluorescent defects in two-dimensional hexagonal boron nitride (hBN) have been demonstrated to be a promising candidate to fulfil this requirement. This work herein demonstrates the potential of hBN defects for being both quantum emitter and quantum memory. The emission wavelengths of a large number of defects have been characterized. Together with thorough photophysical properties, these defects can be directly compared with experiments. The performance of hBN quantum memory has also been evaluated and provided with an experimental condition to achieve 95% efficiency. For an efficient global quantum network, the rigorous comparison of compatibility between hBN defects and other quantum components has been investigated. This work, therefore, serves as a recipe for generating a universal solid-state quantum system applicable to several components in optical quantum technologies.

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Section: Compatibility Of Hbn Defects In Global Quantum Networkmentioning

confidence: 99%

Theoretical investigation of fluorescent defects in hexagonal boron nitride and their applications in quantum technologies

Cholsuk,

Cakan,

Suwana

et al. 2024

Quantum Technologies 2024

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“…As our database reveals the intrinsic triplet-singlet defects and includes transition energy, zero-phonon line (ZPL), transition dipole moment (𝜇), lifetime (𝜏), quality factor (Q), and bandwidth (Δ). This is not only useful for quantum memory applications, but also applies to quantum sensing applications, including optically detected magnetic resonance (ODMR) with the ground- [32,33] and excited states. [34] The ODMR effect can be even used to sense strain, as strain shifts the energy levels.…”

Section: Introductionmentioning

confidence: 99%

Identifying Electronic Transitions of Defects in Hexagonal Boron Nitride for Quantum Memories

Cholsuk,

Çakan,

Suwanna

et al. 2024

Advanced Optical Materials

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A quantum memory is a crucial keystone for enabling large‐scale quantum networks. Applicable to the practical implementation, specific properties, i.e., long storage time, selective efficient coupling with other systems, and a high memory efficiency are desirable. Though many quantum memory systems are developed thus far, none of them can perfectly meet all requirements. This work herein proposes a quantum memory based on color centers in hexagonal boron nitride (hBN), where its performance is evaluated based on a simple theoretical model of suitable defects in a cavity. Employing density functional theory calculations, 257 triplet and 211 singlet spin electronic transitions are investigated. Among these defects, it is found that some defects inherit the Λ electronic structures desirable for a Raman‐type quantum memory and optical transitions can couple with other quantum systems. Further, the required quality factor and bandwidth are examined for each defect to achieve a 95% writing efficiency. Both parameters are influenced by the radiative transition rate in the defect state. In addition, inheriting triplet‐singlet spin multiplicity indicates the possibility of being a quantum sensing, in particular, optically detected magnetic resonance. This work therefore demonstrates the potential usage of hBN defects as a quantum memory in future quantum networks.

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“…We focus especially on the triplet and singlet states as their electronic structures can be applied not only as a single photon source but also for quantum sensing − , and quantum memory applications. , For quantum sensing, a recent example is the negatively charged boron vacancy. Its intrinsic triplet state allows it to have the splitting at m s = 0 and ±1, which supports the optically detected magnetic resonance (ODMR) measurement. ,, Meanwhile, relaxation can also exist through the nonradiative transition via the intersystem-crossing pathway; hence, the singlet electronic structure also needs to be unraveled. For a quantum memory, the triplet configuration supports the Λ structure for writing and retrieving processes as has been proposed recently to implement in hBN. , As such, in this database, if the neutral-charge defects are doublet states, the singly positive and negative charge states are applied to make them triplets.…”

Section: Introductionmentioning

confidence: 99%

The hBN Defects Database: A Theoretical Compilation of Color Centers in Hexagonal Boron Nitride

Cholsuk,

Zand,

Çakan

et al. 2024

J. Phys. Chem. C

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Color centers in hexagonal boron nitride (hBN) have become an intensively researched system due to their potential applications in quantum technologies. There has been a large variety of defects being fabricated, yet, for many of them, the atomic origin remains unclear. The direct imaging of the defect is technically very challenging, in particular since, in a diffractionlimited spot, there are many defects and then one has to identify the one that is optically active. Another approach is to compare the photophysical properties with theoretical simulations and identify which defect has a matching signature. It has been shown that a single property for this is insufficient and causes misassignments.Here, we publish a density functional theory-based searchable online database covering the electronic structure of hBN defects (257 triplet and 211 singlet configurations), as well as their photophysical fingerprint (excited state lifetime, quantum efficiency, transition dipole moment and orientation, polarization visibility, and many more). All data is open-source and publicly accessible at https://h-bn.info and can be downloaded. It is possible to enter the experimentally observed defect signature and the database will output possible candidates which can be narrowed down by entering as many observed properties as possible. The database will be continuously updated with more defects and new photophysical properties (which can also be specifically requested by any users).The database therefore allows one to reliably identify defects but also investigate which defects might be promising for magnetic field sensing or quantum memory applications.

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DC Magnetic Field Sensitivity Optimization of Spin Defects in Hexagonal Boron Nitride

Cited by 10 publications

References 37 publications

Theoretical investigation of fluorescent defects in hexagonal boron nitride and their applications in quantum technologies

Theoretical investigation of fluorescent defects in hexagonal boron nitride and their applications in quantum technologies

Identifying Electronic Transitions of Defects in Hexagonal Boron Nitride for Quantum Memories

The hBN Defects Database: A Theoretical Compilation of Color Centers in Hexagonal Boron Nitride

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