DC magnetron sputtered tungsten: W film properties and electrical properties of W/Si Schottky diodes

Bouziane, K.; Mamor, M.; Meyer, F.

doi:10.1007/s00339-004-2558-5

Cited by 24 publications

(13 citation statements)

References 19 publications

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“…This effect only happens around the bent area, as demonstrated by the S profile, which remained unchanged when measured above (up) or below (down) the bending median plane of the sample, using a positron spot size of ~4 mm (figure 9b). This change possibly results from defects produced during the emergence of the β-W phase in the near-surface region, as the α→β phase transition is known to be favoured by a compressive-to-tensile stress transition [30].…”

Section: Studies Of Stresses Induced Defects and Phase Transition In mentioning

confidence: 99%

Positron depth profiling in solid surface layers

Grynszpan¹,

Anwand²,

Bräuer³

et al. 2007

Ann. Chim. Sci. Mat.

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-We briefly review the principles of the Doppler Broadening of the positron annihilation radiation line, the most common technique used in defect depth profiling of solids relevant to dcbeams. We focus on some specific examples of Slow Positron Implantation Spectroscopy (SPIS) investigations related to technological issues such as, for instance, i) phase transitions in metal coatings possibly induced by internal stresses, ii) substrate pre-treatment or annealing dependence of defect profiles at metal/polymer interfaces or in the deposited layers, and. iii) near-surface structural modification by ion implantation in ceramics and multilayers. In each case we elaborate on the possibility of using SPIS results and possible depth profile features as criteria for on-or off-line quality control in industrial processes. We finally conclude with an overall picture of the operating characteristics of positron annihilation techniques.Résumé -Profils d'implantation des positons dans des couches de surface des solides. Nous passons brièvement en revue les principes de la méthode de l'élargissement Doppler de la raie d'annihilation des positons, technique la plus fréquemment utilisée en analyse de surface des solides par faisceau à courant continu. Nous considérons quelques d'applications technologiques de la caractérisation par spectroscopie d'implantation des positrons lents (SPIS), telles que, par exemple, i) les transitions de phases éventuellement induites par contraintes internes dans les dépôts métalliques, ii) l'influence de prétraitements du substrat ou de recuits sur le profil des défauts aux interfaces métal/polymère ou dans des couches déposées, et iii) la modification structurale par implantation ionique en proche surface de céramiques et de multicouches. Dans tous les cas nous envisageons l'éventualité d'utiliser la technique SPIS et les particularités des profils de défauts comme critères dans des contrôles de qualité en ligne ou en post-production industrielle. Enfin, nous concluons par un panorama des caractéristiques de mise en oeuvre des techniques de spectroscopie d'annihilation des positrons.

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Section: Studies Of Stresses Induced Defects and Phase Transition In mentioning

confidence: 99%

Positron depth profiling in solid surface layers

Grynszpan¹,

Anwand²,

Bräuer³

et al. 2007

Ann. Chim. Sci. Mat.

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“…The effect of sputtering conditions on the properties of thin tungsten films deposited on rigid substrates has been researched systematically. [13][14][15][16][17] However, growth of thin tungsten films on flexible substrates is substantially different from that on rigid substrates, because of different coefficients of thermal expansion, the amorphous states of polymer substrates, and temperature limitations. Little effort has been devoted to study of the growth of thin tungsten films on flexible substrates.…”

Section: Introductionmentioning

confidence: 99%

Deposition of Tungsten Thin Films on Flexible Polymer Substrates by Direct-Current Magnetron Sputtering

Zhang

Huo

Jiao

et al. 2015

Journal of Elec Materi

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We have investigated thin tungsten films deposited on polymer substrates by direct-current magnetron sputtering under different conditions. Unlike tungsten films deposited on rigid substrates, films on polymer substrates grew at appropriate sputtering power, low sputtering pressure, and low substrate temperature. High sputtering power results in tungsten films with good crystal orientation, compact microstructure, and low electrical resistivity. However, high-power sputtering damages the polymer substrates. Enhancing sputtering pressure substantially degrades tungsten orientation and increases electrical resistivity. Furthermore, a slight increase in substrate temperature results in tungsten films with good crystal orientation, a dense microstructure, and low electrical resistivity. Nonetheless, a high substrate temperature results in soft and deformed polymer substrates; this degrades tungsten crystal orientation and substantially roughens tungsten films. On the basis of this study, compact and flat tungsten films with low electrical resistivity can be obtained at a sputtering power of 69 W, a sputtering pressure of 1 Pa, a substrate temperature of 100°C, and a distance between target and substrate of 60 mm.

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“…These features make W a suitable electrode for BAW resonators and extend their application to high power handling field. The influence of sputtering conditions on the properties of W thin films has been systematically researched [9][10][11][12]. The AlN films deposited on W have also been widely studied [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Study of tungsten deposited on amorphous Si, Si (111) and SiO2 using direct-current magnetron sputtering

Zhang¹,

Jiao²,

Zhong³

et al. 2015

Proceedings of the 4th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering 2015

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Abstract. Tungsten (W) commonly serves as the electrode layer or acoustic reflector layer for the highly columnar growth of AlN piezoelectric thin films used to fabricate film bulk acoustic resonators in power applications. The structure of W film directly influences the texture of AlN thin films above. Moreover, the surface morphology and texture of W thin films are influenced by the substrate materials. In this study, the effects of different underlays on the characteristics of W films deposited using direct-current magnetron sputtering are compared. The results show that W thin film deposited on SiO 2 has well-orientated crystallization, dense microstructure, the smallest RMS and the lowest electrical resistivity. W thin film deposited on Si (111) has the worst RMS and electrical resistivity but a common residual stress and crystallization. W deposited on amorphous Si (α-Si) presents column-like microstructure, the lowest residual stress but a common RMS and electrical resistivity. Since the substrate materials have direct impacts on the resonators it is necessary to take these impacts into account during the design stage of filters or sensors based on film bulk acoustic resonators.

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DC magnetron sputtered tungsten: W film properties and electrical properties of W/Si Schottky diodes

Cited by 24 publications

References 19 publications

Positron depth profiling in solid surface layers

Positron depth profiling in solid surface layers

Deposition of Tungsten Thin Films on Flexible Polymer Substrates by Direct-Current Magnetron Sputtering

Study of tungsten deposited on amorphous Si, Si (111) and SiO2 using direct-current magnetron sputtering

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