DC-PCM: Mitigating PCM Write Disturbance with Low Performance Overhead by Using Detection Cells

Choi, Jungwhan; Jang, Jaeshin; Kim, Lee-Sup

doi:10.1109/tc.2019.2930972

Cited by 7 publications

(2 citation statements)

References 28 publications

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“…Despite these advantages, PCM suffers from low reliability and endurance problems, which need to be addressed in order to use PCM as main memory. Reliability issues in PCM are mainly caused by write disturbance errors (WDEs) [6]- [8]. WDEs refer to a phenomenon whereby surrounding cells of the written cell are damaged owing to thermal interference.…”

Section: Introductionmentioning

confidence: 99%

WL-WD: Wear-Leveling Solution to Mitigate Write Disturbance Errors for Phase-Change Memory

et al. 2022

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Phase-change memory (PCM) is a promising non-volatile memory device due to its attractive properties such as fast access time and byte-addressability. However, PCM is still difficult to be used as a main memory because of its weakness in endurance and write disturbance. Conventional wearleveling algorithms have attempted to handle short endurance, but they have not addressed the issue of write disturbance even though both issues are caused by write operations to PCM. This paper proposes a wear-leveling algorithm that addresses not only the endurance, but also the write disturbance. From the observation that the write disturbance errors and short endurance issues mostly take place in hot addresses, the proposed algorithm first detects hot addresses and maps them to 'hot' regions, which are customized memory regions designed to be robust to write disturbance errors and to support effective wear-leveling. The 'hot' region is not fixed to a specific part, but it moves over an entire memory space to make every cell belong to 'hot' regions in a uniform manner. On the other hand, cold addresses are mapped in 'normal' memory regions by simple linear mapping to reduce the hardware overhead. The proposed algorithm can reduce the write disturbance errors by more than 70% with only a slight instruction per cycle (IPC) degradation. Moreover, the wear-leveling performance is also enhanced by more than 3% compared to other wear-leveling algorithms.

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Section: Introductionmentioning

confidence: 99%

WL-WD: Wear-Leveling Solution to Mitigate Write Disturbance Errors for Phase-Change Memory

et al. 2022

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“…As Moore's law approaches its limits, further boosting the integration density of conventional volatile memories becomes extremely difficult [1]. In view of this, the concept of properly scalable non-volatile memory has become a topic of intensive study over the past decade, resulting in the emergence of several non-volatile memory devices such as ferroelectric RAM (FeRAM) [2][3][4], magnetic RAM (MRAM) [5][6][7], phase-change RAM (PCRAM) [8][9][10], and resistive RAM (RRAM) [11][12][13]. Out of these competing possibillities, PCRAM offers the widest range of advantages including superb scalability [14], fast write/read speeds [15], low energy consumption [16], and a long data retention time [17].…”

Section: Introductionmentioning

confidence: 99%

Overview of Phase-Change Materials Based Photonic Devices

Wang

2020

IEEE Access

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Non-volatile storage memory is widely considered to be one of the most promising candidates to replace dynamic random access memory and even static random access memory. It has recently received particular attention because of its great potential for brain-like neuromorphic applications. Phase-change materials, also known as Chalcogenide alloys, exhibit several especially advantageous traits for non-volatile applications. These include scalability, fast switching speeds, low switching energy and outstanding thermal stability. As a result, most research to date has sought to identify electrical applications for phase-change materials in relation to phase-change random access memory, phase-change memristors and phase-change neuro networks, while overlooking their potential for non-volatile photonic applications. To address this issue, we provide a comprehensive review that examines the remarkable physical properties of phase-change materials for photonic applications, together with emerging phase-change photonic devices. The review begins by presenting the atomic structure and physical properties of phase-change materials, followed by an elaboration of the issues that phase-change materials are currently facing and the strategies being developed to overcome them. The current state-of-the-art and technical challenges confronting phasechange materials in relation to non-volatile photonic applications, such as phase-change photonic memory, phase-change photonic neuro-networks, phase-change metasurfaces and phase-change color displays are then considered. The review concludes by discussing the outlook for successfully implementing phasechange materials in emerging photonic domains.

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Mitigating Write Disturbance in Non-Volatile Memory via Coupling Machine Learning with Out-of-Place Updates

Wu,

Shen,

Yang

et al. 2024

2024 IEEE International Symposium on High-Performance Computer Architecture (HPCA)

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DC-PCM: Mitigating PCM Write Disturbance with Low Performance Overhead by Using Detection Cells

Cited by 7 publications

References 28 publications

WL-WD: Wear-Leveling Solution to Mitigate Write Disturbance Errors for Phase-Change Memory

WL-WD: Wear-Leveling Solution to Mitigate Write Disturbance Errors for Phase-Change Memory

Overview of Phase-Change Materials Based Photonic Devices

Mitigating Write Disturbance in Non-Volatile Memory via Coupling Machine Learning with Out-of-Place Updates

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