DC performance of InP/InGaAs p-n-p heterostructure-emitter bipolar transistor

Tsai, Jung‐Hui; Kang, Yu-Chi

doi:10.1109/ted.2006.872691

Cited by 7 publications

(2 citation statements)

References 7 publications

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“…3,4 Some improved HBTs, such as heterostructure-emitter bipolar transistor (HEBTs), have been addressed to lower the energy band at the emitter side and reduce the DV CE value. [5][6][7][8] However, it results in the charge storage in neutral-emitter region and enhance the base recombination current under large forward B-E bias. 5 That is to say, though a relatively low offset voltage could be achieved, the devices show lower current gain than the conventional HBTs.…”

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confidence: 99%

Comparative Studies on InGaP/GaAs Heterostructure-Emitter Bipolar Transistors with Tunneling- and Superlattice-Confinement Structures

Tsai

2011

J. Electrochem. Soc.

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This article first compares the difference of InGaP/GaAs heterostructure-emitter bipolar transistors (HEBTs) with tunneling-and superlattice-confinement structures at room temperature. In the two devices, the insertion of a thin n-GaAs layer at base-emitter junction helps to eliminate the potential spike and a relatively low collector-emitter offset voltage of about 40 mV is observed. The difference of tunneling mechanism will be investigated. Experimentally, a maximum current gain of 285 ( 176) and a current gain cutoff frequency of 26.4 (16.3) GHz are achieved for the tunneling (superlattice) device. As comparing the superlattice device, the tunneling device shows higher current gain at small B-E bias, while it has smaller current gain at large B-E bias.

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confidence: 99%

Comparative Studies on InGaP/GaAs Heterostructure-Emitter Bipolar Transistors with Tunneling- and Superlattice-Confinement Structures

Tsai

2011

J. Electrochem. Soc.

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“…In recent years, heterojunction bipolar transistors ͑HBTs͒ have attracted great attention for high-speed, low-power, and microwave circuits applications. [1][2][3][4] Nevertheless, based on the high impact ionization rate in the narrow bandgap InGaAs base layer, these conventional HBTs with the InGaAs collector structure are very limited in their power applications due to the low breakdown voltage and the high output conductance. Although breakdown performance can be improved by using a wide bandgap InP layer as the collector in double HBTs ͑DHBTs͒, 5,6 the conduction band discontinuity at the base-collector ͑B-C͒ interface leads to the unwanted current blocking effect.…”

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confidence: 99%

Characteristics of an InP∕InGaAs Double Heterojunction Bipolar Transistor with an InAlGaAs∕InP Composite Collector Structure

Chen

Cheng

Chen

et al. 2008

J. Electrochem. Soc.

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The characteristics of an interesting InP/InGaAs double heterojunction bipolar transistor ͑DHBT͒ with an InAlGaAs/InP composite collector structure were demonstrated and studied. Experimentally, the operation regime was wider than 11 decades in magnitude of collector current density ͑10 −6 -10 5 A/cm 2 ͒. As compared to previous reports, the studied device exhibited a relatively larger Early voltage, smaller base-collector reverse saturation current, I CBO , smaller multiplication factor, M-1, and smaller electron impact ionization, ␣. Moreover, the device studied also showed a relatively weaker temperature dependence on the electron impact ionization, ␣. Consequently, the DHBT device offers promise for low-voltage and low-power circuit applications.In recent years, heterojunction bipolar transistors ͑HBTs͒ have attracted great attention for high-speed, low-power, and microwave circuits applications. 1-4 Nevertheless, based on the high impact ionization rate in the narrow bandgap InGaAs base layer, these conventional HBTs with the InGaAs collector structure are very limited in their power applications due to the low breakdown voltage and the high output conductance. Although breakdown performance can be improved by using a wide bandgap InP layer as the collector in double HBTs ͑DHBTs͒, 5,6 the conduction band discontinuity at the base-collector ͑B-C͒ interface leads to the unwanted current blocking effect. 7 This certainly degrades the device performance. To overcome such disadvantages, several attempts have been made and reported to fabricate high-performance HBTs. These improved structures include the composite collector structure and the compositionally graded layer. 8,9 Previously, an InGaAs/InAlAs chirped superlattice of InP/InGaAs DHBTs with a continuous InAlGaAs grade layer was demonstrated by Krishnan et al. to produce the InP/InGaAs DHBTs. 10 The proposed device with thinner base ͑col-lector͒ layers showed better rf characteristics. Willen et al. used a step-graded InGaAsP collector structure in an InP/InGaAs DHBT, which exhibited good dc current gain and rf characteristics. 11 Yet, the device they studied shows a lower breakdown voltage with a greater collector thickness.In this work, an interesting InP/InGaAs DHBT with an InAlGaAs/InP composite collector structure was fabricated and studied. In this structure, the composite collector consisted of an InGaAs setback layer, a step-graded structure, and an InP layer. Moreover, the step-graded structure used a quaternary InAlGaAs material between the base and collector layers. The InAlGaAs material system had a wider tunable bandgap ͑0.75-1.46 eV͒ than the InGaAsP material system ͑0.75-1.35 eV͒. In addition, the latticematched InAlGaAs/InP material system showed a much larger valence-band offset, which is important to gain better hole confinement in the valence band. Moreover, it is known that InAlGaAs quaternary material can be employed to achieve greater material compatibility with optoelectronic devices over a 1.1-1.6 m wavelength range, such as multiqua...

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Investigation of InP/InGaAs Double Heterojunction Bipolar Transistor (DHBT) with a step-graded InAlGaAs/InP collector structure

Chen

Chu

et al. 2008

Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08)

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DC performance of InP/InGaAs p-n-p heterostructure-emitter bipolar transistor

Cited by 7 publications

References 7 publications

Comparative Studies on InGaP/GaAs Heterostructure-Emitter Bipolar Transistors with Tunneling- and Superlattice-Confinement Structures

Comparative Studies on InGaP/GaAs Heterostructure-Emitter Bipolar Transistors with Tunneling- and Superlattice-Confinement Structures

Characteristics of an InP∕InGaAs Double Heterojunction Bipolar Transistor with an InAlGaAs∕InP Composite Collector Structure

Investigation of InP/InGaAs Double Heterojunction Bipolar Transistor (DHBT) with a step-graded InAlGaAs/InP collector structure

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