2024
DOI: 10.1088/2053-1591/ad1e0f
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DC reactive sputtering of ZnON thin films: band gap engineering and associated evolution of microstructures

Anjana J G,
Kiran Jose,
Aswathi R Nair
et al.

Abstract: Zinc oxynitride (ZnON) has recently emerged as a highly promising band gap-tunable semiconductor material for optoelectronic applications. In this study, a novel DC reactive sputtering protocol was developed to fabricate ZnON films with varying elemental concentrations, by precisely controlling the working pressure. The working pressure was varied from 0.004 mbar to 0.026 mbar.For working pressure greater than 1.6 x 10$^{-3}$mbar, the mean free path of ions decrease, the sputtering rate decreases and the conce… Show more

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