De-doping of graphene by Joule heating with water

Gate-polarity-dependent doping effects of H2O adsorption on graphene/SiO2 field-effect transistors

“…On the other hand, the adsorption of H 2 O molecules will change the electrical properties of GFET working in atmospheric conditions. Many investigations on the adsorption mechanism of H 2 O molecule and the doping behaviors were performed [17][18][19], such as interactions between H 2 O molecules and defects, edges, and substrates. Adsorption/desorption experiments indicate that there are no chemical bonds between the adsorbed H 2 O molecules and the carbon atoms located at the periodic honeycomb cites, and the adsorption is through the Van der Waals (VdW) force [3].…”