De Haas–van Alphen Effect and Fermi Surface Properties of Ti₂Sn₃

Abstract

We grew single crystals of Ti 2 Sn 3 with the orthorhombic crystal structure by the Sn-flux method. Single crystals are in high quality, revealing the residual resistivity ρ 0 = 0.31 µΩ • cm and the residual resistivity ratio RRR = 130. For this compound, we carried out the de Haas-van Alphen (dHvA) experiment. The dHvA frequency, which corresponds to a maximum or minimum cross-sectional area of the Fermi surface, is in the range from 0.3 × 10 7 to 4 × 10 7 Oe, revealing relatively small Fermi surfaces and the cyclotron effective mass is in the range from 0.6 to 4.0 m 0. A relatively large cyclotron mass of 4.0 m 0 claims that conduction electrons are mainly due to the Ti-3d electrons.