De Haas–van Alphen Oscillations for Small Electron Pocket Fermi Surfaces and Huge <i>H</i>-linear Magnetoresistances in Degenerate Semiconductors PbTe and PbS

Kawakatsu, Shoya; Nakaima, Kenri; Kakihana, Masashi; Yamakawa, Y.; Miyazato, Hayato; Kida, Takanori; Tahara, Time; Hagiwara, Masayuki; Takeuchi, Tetsuya; Aoki, Dai; Nakamura, Ai; Tatetsu, Yasutomi; Maehira, Takahiro; Hedo, Masato; Nakama, Takao; Ōnuki, Yoshichika

doi:10.7566/jpsj.88.013704

Cited by 5 publications

(9 citation statements)

References 19 publications

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“…One fundamental dHvA branch named α i (i = 1 − 4) with the dHvA frequency F = 1.78 × 10 5 Oe and the cyclotron effective mass m * c = 0.06 m 0 (m 0 : rest mass of an electron) and its second harmonics 2α i are observed. As described in the previous paper [4], four kinds of nearly ellipsoidal Fermi surfaces at the L point in the fcc Brillouin zone, as shown in Fig. 1(c), are degenerated only for H ∥ ⟨100⟩.…”

Section: Pbxsupporting

confidence: 54%

“…Single crystal growth of PbX was the same in the recent paper [4]. Single crystals of AMnBi 2 were grown by the Bi-self flux method, with the ratio of A : Mn : Bi = 1 : 1 : 9.…”

Section: Methodsmentioning

confidence: 99%

“…1(b) by 0.00699 Ry. The band calculation is based on the relativistic linearized augment plane wave (RFLAPW) energy band calculation [4]. The Fermi surface in Fig.…”

Section: Pbxmentioning

confidence: 99%

“…Simply thinking, excess Pb in the ionic model of Pb 2+ Te 2− produces an n-type semiconductor, whereas vacant Pb produces the p-type. Very recently, we have demonstrated the huge H-linear transverse magnetoresistances for PbTe and PbS [4]. The corresponding Fermi surfaces consist of small nearly ellipsoidal and spherical Fermi surfaces, with dHvA frequencies F = 1.75 × 10 5 Oe (n e = 2.2 × 10 18 electrons/cm 3 ) and F = 2.39 × 10 5 Oe (n e = 2.3 × 10 18 electrons/cm 3 ) for H ∥ ⟨100⟩, respectively.…”

Section: Introductionmentioning

confidence: 99%

“…(Color online) (a) dHvA oscillations and the corresponding FFT spectrum for H ∥ ⟨100⟩ in PbTe, (b) the energy band structure, (c) nearly ellipsoidal electron Fermi surfaces at the L point where the Fermi energy is shifted upward by 0.00699 Ry, cited from Ref [4],. and (d) transverse magnetoresistances.…”

mentioning

confidence: 99%

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Fermi Surfaces and Magnetoresistances of Dirac Conduction Electrons in PbX (X: S, Se, Te) and AMnBi₂ (A = Ca, Sr)

Nakaima

Matsuda

Iha

et al. 2020

Proceedings of J-Physics 2019: International Conference on Multipole Physics and Related Phenomena

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We clarified the Fermi surface properties from the de Haas-van Alphen (dHvA) experiment and also carried out the magnetoresistance measurement in magnetic fields up to 500 kOe for cubic PbX (X: S, Se, Te) and tetragonal AMnBi 2 (A: Ca, Sr) compounds with the Dirac-cone-like band dispersions. The Fermi surfaces in degenerate semiconductors PbX are nearly spherical in PbS and ellipsoidal in PbTe. These compounds including PbSe exhibit characteristic H-linear magnetoresistances. Cylindrical Fermi surfaces of AMnBi 2 along the tetragonal [001] direction were also reported to exhibit characteristic H-linear magnetoresistances, but indicates saturated behaviors in the high magnetic fields up to 500 kOe.

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Section: Pbxsupporting

confidence: 54%

“…Single crystal growth of PbX was the same in the recent paper [4]. Single crystals of AMnBi 2 were grown by the Bi-self flux method, with the ratio of A : Mn : Bi = 1 : 1 : 9.…”

Section: Methodsmentioning

confidence: 99%

“…1(b) by 0.00699 Ry. The band calculation is based on the relativistic linearized augment plane wave (RFLAPW) energy band calculation [4]. The Fermi surface in Fig.…”

Section: Pbxmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Fermi Surfaces and Magnetoresistances of Dirac Conduction Electrons in PbX (X: S, Se, Te) and AMnBi₂ (A = Ca, Sr)

Nakaima

Matsuda

Iha

et al. 2020

Proceedings of J-Physics 2019: International Conference on Multipole Physics and Related Phenomena

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Large longitudinal magnetoresistance of multivalley systems

Mitani¹,

Fuseya²

2020

J. Phys.: Condens. Matter

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The longitudinal magnetoresistance (MR) is assumed to be hardly realized as the Lorentz force does not work on electrons when the magnetic field is parallel to the current. However, in some cases, longitudinal MR becomes large, which exceeds the transverse MR. To solve this problem, we have investigated the longitudinal MR considering multivalley contributions based on the classical MR theory. We have showed that the large longitudinal MR is caused by offdiagonal components of a mobility tensor. Our theoretical results agree with the experiments of large longitudinal MR in IV-VI semiconductors, especially in PbTe, for a wide range of temperatures, except for linear MR at low temperatures.

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Observation of quantum oscillations near the Mott-Ioffe-Regel limit in CaAs3

Wang,

Zhao,

Zhang

et al. 2024

National Science Review

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The Mott-Ioffe-Regel limit sets the lower bound of carrier mean free path for coherent quasiparticle transport. Metallicity beyond this limit is of great interest because it is often closely related to quantum criticality and unconventional superconductivity. Progress along this direction mainly focuses on the strange-metal behaviors originating from the evolution of quasiparticle scattering rate such as linear-in-temperature resistivity, while the quasiparticle coherence phenomena in this regime are much less explored due to the short mean free path at the diffusive bound. Here we report the observation of quantum oscillations from Landau quantization near the Mott-Ioffe-Regel limit in CaAs3. Despite the insulator-like temperature dependence of resistivity, CaAs3 presents giant magnetoresistance and prominent Shubnikov–de Haas oscillations from Fermi surfaces, indicating highly-coherent band transport. In contrast, the quantum oscillation is absent in the magnetic torque. The quasiparticle effective mass increases systematically with magnetic fields, manifesting a much larger value than the expectation given by magneto-infrared spectroscopy. It suggests a strong many-body renormalization effect near Fermi surface. We find that these unconventional behaviors may be explained by the interplay between the mobility edge and the van Hove singularity, which results in the formation of coherent cyclotron orbits emerging at the diffusive bound. Our results call for further study on the electron correlation effect of the van Hove singularity.

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De Haas–van Alphen Oscillations for Small Electron Pocket Fermi Surfaces and Huge H-linear Magnetoresistances in Degenerate Semiconductors PbTe and PbS

Cited by 5 publications

References 19 publications

Fermi Surfaces and Magnetoresistances of Dirac Conduction Electrons in PbX (X: S, Se, Te) and AMnBi₂ (A = Ca, Sr)

Fermi Surfaces and Magnetoresistances of Dirac Conduction Electrons in PbX (X: S, Se, Te) and AMnBi₂ (A = Ca, Sr)

Large longitudinal magnetoresistance of multivalley systems

Observation of quantum oscillations near the Mott-Ioffe-Regel limit in CaAs3

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De Haas–van Alphen Oscillations for Small Electron Pocket Fermi Surfaces and Huge H-linear Magnetoresistances in Degenerate Semiconductors PbTe and PbS

Cited by 5 publications

References 19 publications

Fermi Surfaces and Magnetoresistances of Dirac Conduction Electrons in PbX (X: S, Se, Te) and AMnBi2 (A = Ca, Sr)

Fermi Surfaces and Magnetoresistances of Dirac Conduction Electrons in PbX (X: S, Se, Te) and AMnBi2 (A = Ca, Sr)

Large longitudinal magnetoresistance of multivalley systems

Observation of quantum oscillations near the Mott-Ioffe-Regel limit in CaAs3

Contact Info

Product

Resources

About

Fermi Surfaces and Magnetoresistances of Dirac Conduction Electrons in PbX (X: S, Se, Te) and AMnBi₂ (A = Ca, Sr)

Fermi Surfaces and Magnetoresistances of Dirac Conduction Electrons in PbX (X: S, Se, Te) and AMnBi₂ (A = Ca, Sr)