Dead-Time Effect of the High-Frequency Isolated Bidirectional Full-Bridge DC–DC Converter: Comprehensive Theoretical Analysis and Experimental Verification

Zhao, Biao; Song, Qiang; Liu, Wenhua; Sun, Yandong

doi:10.1109/tpel.2013.2271511

Cited by 155 publications

(68 citation statements)

References 24 publications

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“…18. The output power can be easily regulated and zero voltage switching (ZVS) can be achieved [25]- [26]. However, compared with the non-isolated converter in Fig.…”

Section: A Bidirectional Dc/dc Converters (Bi-dc/dc)mentioning

confidence: 99%

Review on Distributed Energy Storage Systems for Utility Applications

Chang

Zhang

et al. 2017

CPSS TPEA

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“…18. The output power can be easily regulated and zero voltage switching (ZVS) can be achieved [25]- [26]. However, compared with the non-isolated converter in Fig.…”

Section: A Bidirectional Dc/dc Converters (Bi-dc/dc)mentioning

confidence: 99%

Review on Distributed Energy Storage Systems for Utility Applications

Chang

Zhang

et al. 2017

CPSS TPEA

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“…Several analyses have been implemented on the power flow of DAB converters with a Single Phase-Shift Modulation (SPSM) [8]- [12]. In [8], the power flow equation for a singlephase DAB was derived without considering any losses nor dead time between switches in the same leg.…”

Section: Introductionmentioning

confidence: 99%

“…In [11], the power flow equation was derived considering MOSFET's ON resistance, and parasitic resistances of the inductor, transformer and PCB traces; however, the dead time effect was somehow neglected. In [12], the power flow equation was derived considering dead times. With those equations, some power flow characteristics were given, including the power plateau phenomenon which will be further investigated in this paper.…”

Section: Introductionmentioning

confidence: 99%

Power plateau and anti-power phenomenon of dual active bridge converter with phase-shift modulation

Xiao

Zhang

Mao

et al. 2018

2018 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Abstract-In this paper, an improved power flow model for dual active bridge (DAB) converters with phase-shift modulation is introduced. Based on the analysis and the accordingly derived equations, a power plateau phenomenon, in which the phase shift loses its power-regulating capability, is investigated. Moreover, it is found that this power plateau phenomenon leads to an inversed power flow characteristic in some specific regions compared to the models reported in previous literature. The characteristics of the power plateau and its occurring conditions are derived and analyzed in depth. The calculations, simulations and analyses have been verified by experiments.

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“…Recently, silicon carbide devices for very high voltage applications have been developed [12][13][14][15]. The switching frequency of the SiC MOSFET high-power converter is higher than those of silicon IGBTs, with its lower conduction losses, combined with its inherent low switching losses, which achieves the benefit of working with smaller filter components [16][17][18]. Scholars also have performed a large number of studies for medium and low voltage applications.…”

Section: Introductionmentioning

confidence: 99%

Loss Model and Efficiency Analysis of Tram Auxiliary Converter Based on a SiC Device

et al. 2017

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Currently, the auxiliary converter in the auxiliary power supply system of a modern tram adopts Si IGBT as its switching device and with the 1700 V/225 A SiC MOSFET module commercially available from Cree, an auxiliary converter using all SiC devices is now possible. A SiC auxiliary converter prototype is developed during this study. The author(s) derive the loss calculation formula of the SiC auxiliary converter according to the system topology and principle and each part loss in this system can be calculated based on the device datasheet. Then, the static and dynamic characteristics of the SiC MOSFET module used in the system are tested, which aids in fully understanding the performance of the SiC devices and provides data support for the establishment of the PLECS loss simulation model. Additionally, according to the actual circuit parameters, the PLECS loss simulation model is set up. This simulation model can simulate the actual operating conditions of the auxiliary converter system and calculate the loss of each switching device. Finally, the loss of the SiC auxiliary converter prototype is measured and through comparison it is found that the loss calculation theory and PLECS loss simulation model is valuable. Furthermore, the thermal images of the system can prove the conclusion about loss distribution to some extent. Moreover, these two methods have the advantages of less variables and fast calculation for high power applications. The loss models may aid in optimizing the switching frequency and improving the efficiency of the system.

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Dead-Time Effect of the High-Frequency Isolated Bidirectional Full-Bridge DC–DC Converter: Comprehensive Theoretical Analysis and Experimental Verification

Cited by 155 publications

References 24 publications

Review on Distributed Energy Storage Systems for Utility Applications

Review on Distributed Energy Storage Systems for Utility Applications

Power plateau and anti-power phenomenon of dual active bridge converter with phase-shift modulation

Loss Model and Efficiency Analysis of Tram Auxiliary Converter Based on a SiC Device

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