Debye Screening Length

Ghatak, K. P.; Bhattacharya, Sitangshu

doi:10.1007/978-3-319-01339-8

Cited by 15 publications

(14 citation statements)

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“…Here, λ free is an effective thickness of the induced free carrier sheet, and is expressed as an harmonic average between the free carrier Debye length (λ D ) and thickness of In-Ga-Zn-O channel layer (t S ), viz. λ free = (λ D −1 + t S −1 ) −1 , assuming that the penetration depth of the vertical electric field is limited within t S 17 18 . The λ D can be obtained using ε S kT/(qQ free ) 5 16 , where ε S is the permittivity of the In-Ga-Zn-O channel layer.…”

Section: Resultsmentioning

confidence: 99%

Conduction Threshold in Accumulation-Mode InGaZnO Thin Film Transistors

Lee

Nathan

2016

Sci Rep

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The onset of inversion in the metal-oxide-semiconductor field-effect transistor (MOSFET) takes place when the surface potential is approximately twice the bulk potential. In contrast, the conduction threshold in accumulation mode transistors, such as the oxide thin film transistor (TFT), has remained ambiguous in view of the complex density of states distribution in the mobility gap. This paper quantitatively describes the conduction threshold of accumulation-mode InGaZnO TFTs as the transition of the Fermi level from deep to tail states, which can be defined as the juxtaposition of linear and exponential dependencies of the accumulated carrier density on energy. Indeed, this permits direct extraction and visualization of the threshold voltage in terms of the second derivative of the drain current with respect to gate voltage.

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Section: Resultsmentioning

confidence: 99%

Conduction Threshold in Accumulation-Mode InGaZnO Thin Film Transistors

Lee

Nathan

2016

Sci Rep

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“…Long-enough Debye lengths can fully detect the charged molecules with high sensitivity. In the design of nanowire sensors, an optimal Debye length is a major parameter to be carefully considered, and a long Debye length ensures the counterions effect small [36]. The Debye length for the nanowire sensors can be approximately calculated as λD≈0.304I−0.5, where I is the ionic strength of the solvent solution [37,38].…”

Section: Working Principle and Fabrication Processmentioning

confidence: 99%

Nanowire-Based Biosensors: From Growth to Applications

et al. 2018

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Over the past decade, synthesized nanomaterials, such as carbon nanotube, nanoparticle, quantum dot, and nanowire, have already made breakthroughs in various fields, including biomedical sensors. Enormous surface area-to-volume ratio of the nanomaterials increases sensitivity dramatically compared with macro-sized material. Herein we present a comprehensive review about the working principle and fabrication process of nanowire sensor. Moreover, its applications for the detection of biomarker, virus, and DNA, as well as for drug discovery, are reviewed. Recent advances including self-powering, reusability, sensitivity in high ionic strength solvent, and long-term stability are surveyed and highlighted as well. Nanowire is expected to lead significant improvement of biomedical sensor in the near future.

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“…It has been mentioned before that the L D value is closely related to the experimental conditions. Ghatak et al systematically discussed the calculation method and influencing factors of L D . The existence of the electric field and magnetic field will affect L D .…”

Section: Resultsmentioning

confidence: 99%

“…The Debye screening length is not the only property of materials and devices themselves, but the environmental and experimental conditions also have an important influence on the value of the Debye screening length. It has been reported in the literature that external stimulus conditions such as electric field, magnetic field, and light field have an obvious regulatory effect on the Debye screening length . It can be seen from eq that the conditions such as gate voltage are closely related to the Debye screening length.…”

Section: Introductionmentioning

confidence: 89%

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Introducing a Surface-Enhanced-Raman-Scattering Enhancer for Experimental Estimation of the Debye Screening Length in Organic Field-Effect Transistors

Shou

Lin

et al. 2021

ACS Appl. Electron. Mater.

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The Debye screening length L D is one of the key parameters for the fieldeffect channel geometry. However, to the best of our knowledge, there are little reports on the experimental estimation of L D . In this study, we have reported our recent observation of in situ surface-enhanced Raman scattering (SERS) mapping during the investigation of the operating organic field-effect transistors. Placing SERS enhancers in different positions of the device can obtain charge and potential information at different locations, which can help to analyze the spatial distribution of charge and quantitatively estimate the Debye screening length. The enhancing factor of Raman intensity that is testified somehow increases exponentially with the external electrical field in both experiments and theoretical calculations. The experimental estimated Debye screening length is from 6.5 to 3.6 nm when the gate voltage changed from −30 to −50 V. This value is larger than the traditional consideration that the Debye screening length is less than 1 nm, which is due to the presence of the light field and the corresponding photogenerated carriers distributed in the whole active layer. Besides, the charge trapping effect of SERS enhancers has been testified to introduce weak error during the accumulation mode with large current density. These conditions have well mimicked the working mode of phototransistors, which is of great significance for optimization of phototransistor performance.

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Debye Screening Length

Cited by 15 publications

References 0 publications

Conduction Threshold in Accumulation-Mode InGaZnO Thin Film Transistors

Conduction Threshold in Accumulation-Mode InGaZnO Thin Film Transistors

Nanowire-Based Biosensors: From Growth to Applications

Introducing a Surface-Enhanced-Raman-Scattering Enhancer for Experimental Estimation of the Debye Screening Length in Organic Field-Effect Transistors

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