Debye temperature and melting point of II‐VI and III‐V semiconductors

Abstract

In this paper, simple relations are proposed for the calculation of Debye temperature θ D and melting point T m of II-VI and III-V zincblende semiconductors. Six relations are proposed to calculate the value of θ D . Out of these six relations, two are based on plasmon energy data and the others on molecular weight, melting point, ionicity and energy gap. Three simple relations are proposed to calculate the value of T m . They are based on plasmon energy, molecular weight and ionicity of the semiconductors. The average percentage deviation of all nine equations was calculated. In all cases, except one, it was estimated between 3.34 to 17.42 % for θ D and between 2.37 to 10.45 % for T m . However, in earlier correlations, it was reported between 10.59 to 33.38% for θ D and 6.96 to 14.95% for T m . The lower percentage deviation shows a significant improvement over the empirical relations proposed by earlier workers. The calculated values of θ D and T m from all equations are in good agreement with the available experimental values and the values reported by different workers.

Simplified expressions for calculating Debye temperature and melting point of II-VI and III-V semiconductors

“…Table 2. In the case of III-V materials, the average percentage deviation is calculated and to be found improved in comparison with other result (3.34 %) cited Kumar et al [2], it is only about 2.42 %. Eq.…”

“…Based on the previous works of Kumar et al [2,9] on A I B III C 2 VI and A II B IV C 2 V ternary chalcopyrite semiconductors, and on A II B VI and A III B V binary semiconductor compounds, the Debye temperature and some other physical quantities are related by [2], [9].…”

“…It is naturally depends on several other quantities, such as the pressure, elastic constants, and other thermal quantities, such as specific heat and lattice thermal conductivity [2]. At ambient temperature and pressure, several II-VI and III-V binary semiconductors possess the cubic zincblende structure; these binary compounds have potential applications in the fields of electronic and optoelectronic devices [3].…”

“…The development of new optoelectronic materials depends mostly on the materials engineering at a practical level, and also on a good understanding of the properties of materials [4]. Knowledge of different thermodynamic properties such as Debye temperature helps engineers in the improvement of the manufacturing of the semiconductor devices by good selecting of the appropriate materials [2]. And due to technological importance of II-VI and III-V semiconductors, several experimental and theoretical works [4][5][6][7][8][9] on their electronic, optical, mechanical and thermal properties were published.…”

Mechanical properties of BBi compound under pressure

“…[20]; the deviation being only about 1.87 %. For A III -B V binary semiconductor compounds, a linear relationship between the Debye temperature and the melting point T m was proposed; it is given by the following formula [26]: …”