Photothermocatalytic CO 2 reduction as the channel of the energy and environmental issues resolution has captured persistent attention in recent years. In 2 O 3 has been prompted to be a potential photothermal catalyst in this sector on account of its unique physicochemical properties. However, different from the metal-based photothermal catalyst with the nature of efficient light-to-thermal conversion and H 2 dissociation, the wide-bandgap semiconductor needs to be modified to possess wide-wavelength-range absorption and the active surface. It remains a challenge to achieve the two aims simultaneously via a single material modulation approach. In this study, one strategy of carbon doping can empower In 2 O 3 with two advantageous modifications. Carbon doping can reduce the formation energy of oxygen vacancy, which induces the generation of oxygen-vacancy-riched material. The introduction of oxygen defect levels and carbon doping levels in the bandgap of In 2 O 3 significantly reduces this bandgap, which endows it full-spectral and intensive solar light absorption. Therefore, the carbon doped In 2 O 3 achieves effective light-to-thermal conversion and delivers a 123.6 mmol g -1 h -1 of CO generation rate with near-unity selectivity, as well as prominent stability in photothermocatalytic CO 2 reduction.