2005
DOI: 10.1016/j.jlumin.2004.10.026
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Decay dynamics of blue–green luminescence in meso-porous MCM-41 nanotubes

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Cited by 11 publications
(7 citation statements)
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“…We found that the observed decay dynamics can be described by a stretched exponential function where I 0 is the PL intensity at t = 0, τ is a characteristic decay time, and β is a stretching parameter that represents the degree of deviation from a pure exponential decay. As mentioned in the Introduction, a similar stretched exponential decay on a time scale of nanoseconds has been observed from Si- and SiO 2 -based nanostructured materials. We should also note that the stretched exponential PL decay can generally be found in disordered systems in which the dispersive diffusion of photoexcited electrons and/or holes are possible. , The dispersive diffusion of carriers most likely results from the excitation of carriers from localized to extended states or hopping among localized states. , Because the PL decays shown in Figures and have a characteristic decay time of several nanoseconds, we consider that the present PL processes are ascribed to the allowed singlet-to-singlet transitions and the subsequent diffusion-controlled electron−hole recombination processes.…”
Section: Resultssupporting
confidence: 60%
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“…We found that the observed decay dynamics can be described by a stretched exponential function where I 0 is the PL intensity at t = 0, τ is a characteristic decay time, and β is a stretching parameter that represents the degree of deviation from a pure exponential decay. As mentioned in the Introduction, a similar stretched exponential decay on a time scale of nanoseconds has been observed from Si- and SiO 2 -based nanostructured materials. We should also note that the stretched exponential PL decay can generally be found in disordered systems in which the dispersive diffusion of photoexcited electrons and/or holes are possible. , The dispersive diffusion of carriers most likely results from the excitation of carriers from localized to extended states or hopping among localized states. , Because the PL decays shown in Figures and have a characteristic decay time of several nanoseconds, we consider that the present PL processes are ascribed to the allowed singlet-to-singlet transitions and the subsequent diffusion-controlled electron−hole recombination processes.…”
Section: Resultssupporting
confidence: 60%
“…This blue emission is characterized by a broad PL peak centered at ∼450 nm and a nonexponential decay function on a time scale of several nanoseconds. It is also interesting to note that a similar blue PL with a nanosecond decay time can be found in other nanostructured forms of silica and silicon, including oxidized porous silicon, mesoporous MCM-41 silica, and a natural hydrated form of silica, namely, opal . It is hence probable that the blue PL from these Si- and SiO 2 -based nanostructured materials originates from similar emission centers; however, the structural origin of the blue PL emission still remains to be solved.…”
Section: Introductionmentioning
confidence: 82%
“…An understanding of the optical properties of mesoporous siliceous materials is important for extending their range of applications in optical devices. The photoluminescence (PL) of mesoporous siliceous MCM-41 has been studied recently [10][11][12][13][14][15][16][17][18]. The red (1.8-2 eV) PL in MCM-41 has been commonly attributed to oxygen-related defects, the non-bridging oxygen hole centers (NBOHCs) [10][11][12].…”
mentioning
confidence: 99%
“…A green luminescence peak is mainly attributed to the interaction of defects, such as nonbridged oxygen hole centers, E′ centers (Si • ) of self-trapped excitons, and doubly coordinated silicon centers. In the annealing process, the doubly coordinated silicon centers are produced from the E′ centers, with the transition from a triplet to a singlet state resulting in green light emission. , …”
Section: Resultsmentioning
confidence: 99%
“…In the annealing process, the doubly coordinated silicon centers are produced from the E′ centers, with the transition from a triplet to a singlet state resulting in green light emission. 46,47 The luminescence characteristics of the singly doped substrates are shown in Figure 5. The metal, Ga, Bi, In, or Sn, was attached to the substrate surface and annealed at 600 °C for 10 h. The luminescence intensity of the In-doped sample was the highest.…”
Section: Resultsmentioning
confidence: 99%