The absolute total fluorescence yield for the XeCl*
(B,C) 2Σ1/2
+ →
2Σ1/2
+ transition has been
determined
from pulse electron-irradiated Xe/CFCl3 gas mixtures.
Since no experimental resolution of the two formation
pathways was achieved, individual, unquenched limiting yields for the
excited state, Xe* + CFCl3 → XeCl*
+ .CHCl2, G
o* =
2.4 ± 0.6, and ionic recombination, Xe2
+
+ Cl- + Xe → XeCl* + 2Xe,
G
o
+ = 3.2 ± 0.5,
reactions have been calculated by modeling the dependence of the total
fluorescent yield on xenon and halide
gas pressure. Analogous experiments were also conducted for the
formation of the XeI* exciplex from the
irradiation of Xe/CF3I gas mixtures. Individual values
for the two component formation processes were
again calculated from total gas yields, giving
G
o* = 0.31 ± 0.08 and
G
o
+ = 4.5 ± 0.6. These
yields are
compared to the predictions of current theoretical models, and the
effects of alternate recombination pathways
are discussed.