A microwave kinetic inductance detector (MKID) is a cutting-edge superconducting detector, and its principle is based on a superconducting resonator circuit. The superconducting transition temperature (Tc) of the MKID is an important parameter because various MKID characterization parameters depend on it. In this paper, we propose a method to measure the Tc of the MKID by changing the applied power of the readout microwaves. A small fraction of the readout power is deposited on the MKID, and the number of quasiparticles in the MKID increases with this power. Furthermore, the quasiparticle lifetime decreases with the number of quasiparticles. Therefore, we can measure the relation between the quasiparticle lifetime and the detector response by rapidly varying the readout power. From this relation, we evaluate the intrinsic quasiparticle lifetime. This lifetime is theoretically modeled by Tc, the physical temperature of the MKID device, and other known parameters. We obtain Tc by comparing the measured lifetime with that acquired using the theoretical model. Using an MKID fabricated with aluminum, we demonstrate this method at a 0.3 K operation. The results are consistent with those obtained by Tc measured by monitoring the transmittance of the readout microwaves with the variation in the device temperature. The method proposed in this paper is applicable to other types, such as a hybrid-type MKID.