Efficient sustained-release of B atoms, sufficient for doping to semiconductor substrates, was achieved when W wires boronized by NH 3 BH 3 /H 2 were heated in the presence of H 2. The B-atom density in the gas phase was on the order of 10 11 cm-3 and could be kept constant more than 240 min. Matsumura and coworkers have shown that surface doping of B atoms can be carried out by exposing crystalline Si to the active species formed by the catalytic cracking of B 2 H 6 on hot W wire surfaces. 1,2 Such surface doping makes it possible to control the surface potential of crystalline Si, and consequently to reduce the surface recombination velocity of minority carriers. The problem is that B 2 H 6 is not only toxic, but also explosive. Recently, we have reported that NH 3 BH 3 ,