DWs results in anomalous behavior in the material compared to the mono domain state. In relaxorferroelectrics such as Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 (PMN-PT) or Pb(In 1/2 Nb 1/2 )O 3 -Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 (PIN-PMN-PT), manipulating DWs has been shown to achieve excep tional dielectric and piezoelectric proper ties, lending them as excellent candidates for several electromechanical applica tions including sensors, actuators, energy storage, drug delivery, diagnostic imaging, and nondestructive testing. [4][5][6][7][8][9] Among several DW engineering methods to achieve further enhancement, the use of alternating current poling (ACP) to manipulate domains has received con siderable attention due to its convenience and effectiveness. [10][11][12][13][14][15][16] Studies have shown that up to 40% enhancement in piezo electric coefficient (d 33 ) and 35% enhance ment in free dielectric constants using ACP compared to conventional direct cur rent poling (DCP) methods. [10][11][12][13][14][15][16] However, even though the DW engineeringbased piezoelectric property enhancement is consistent for ACP, a consensus on how the domain size (or DW density) influences the piezoelectric properties is still not reached. Conventional belief in ferro electrics has been that the property enhancement is due to high domain wall density. [17][18][19] Studies by Chang et al., [11] Xu et al., [16] Zhang et al., [13] and Sun et al. [10] on PMN-PT single crystals (SCs) show that the presence of monoclinic phases and finer domain sizes as a result of ACP are responsible for piezoelectric property enhancement, indicating that the con ventional wisdom still holds for relaxorferroelectrics. However, Acting like thermal resistances, ferroelectric domain walls can be manipulated to realize dynamic modulation of thermal conductivity (k), which is essential for developing novel phononic circuits. Despite the interest, little attention has been paid to achieving room-temperature thermal modulation in bulk materials due to challenges in obtaining a high thermal conductivity switching ratio (k high /k low ), particularly in commercially viable materials. Here, room-temperature thermal modulation in 2.5 mm-thick Pb(Mg 1/3 Nb 2/3 )O 3 -xPbTiO 3 (PMN-xPT) single crystals is demonstrated. With the use of advanced poling conditions, assisted by the systematic study on composition and orientation dependence of PMN-xPT, a range of thermal conductivity switching ratios with a maximum of ≈1.27 is observed. Simultaneous measurements of piezoelectric coefficient (d 33 ) to characterize the poling state, domain wall density using polarized light microscopy (PLM), and birefringence change using quantitative PLM reveal that compared to the unpoled state, the domain wall density at intermediate poling states (0< d 33