Decoupling and ordering of multilayer graphene on C-face 3C-SiC(111)

Bouhafs, Chamseddine; Stanishev, V.; Zakharov, Alexei; Hofmann, Tino; Kühne, Philipp; Iakimov, Tihomir; Yakimova, Rositsa; Schubert, M.; Darakchieva, Vanya

doi:10.1063/1.4967525

Cited by 12 publications

(14 citation statements)

References 24 publications

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“…These results suggest that the observed disorder can be also ruled out for TL graphene. We note that the superstructure spots were never observed for BL graphene but could be found in the case of TL graphene grown on C-face 3C-SiC [34]. 1s core-level spectra of ML and BL graphene show the characteristic single 280 narrow peaks associated with the C sp2 -C sp2 bonds typical for C-face graphene [16].…”

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confidence: 69%

Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC

Bouhafs

Zakharov

Ivanov

et al. 2017

Carbon

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In this work, we report a muti-scale investigation using several nano-, micro and macro-scale techniques of few layer graphene (FLG) sample consisting of large monolayer (ML) and bilayer (BL) areas grown on C-face 4H-SiC (000-1) by high-temperature sublimation. Single 1×1 diffraction patterns are observed by micro-low-energy electron diffraction for ML, BL and trilayer graphene with no indication of out-of-plane rotational disorder. A SiO x layer is identified between graphene and SiC by X-ray photoelectron emission spectroscopy and reflectance measurements. The chemical composition of the interface layer changes towards SiO 2 and its thickness increases with aging in normal ambient conditions. The formation mechanism of the inter- *

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confidence: 69%

Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC

Bouhafs

Zakharov

Ivanov

et al. 2017

Carbon

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“…LEED patterns of multilayer graphene grown on the C-face SiC always show multiple spots [13]. It may be either due to decoupled rotated graphene layers in the stack or rotational disorder within a single graphene layer.…”

Section: Electronic Properties Of Graphene Grown On the C-face Sicmentioning

confidence: 99%

“…The Si-face 3C-SiC is a proper substrate for the growth of large-area homogeneous graphene, particularly, multilayer graphene [9,10]. In addition, the electronic band structure of graphene epilayer grown on the C-face SiC are very different from that on Si-face [11][12][13], which considerably fascinates so much discussion. For example, graphene grown on the C-face 4Hor 6H-SiC exhibits higher mobility factors over that on the Si-face at room temperature [14].…”

Section: Potential Applications Of 3c-sicmentioning

confidence: 99%

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Growth of 3C-SiC and Graphene for Solar Water-Splitting Application

Shi

2019

Linköping Studies in Science and Technology. Dissertations

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Silicon carbide (SiC) is regarded as an important semiconductor for a variety of applications including high-temperature, high-power and high-frequency devices. The most common polytypes of SiC are hexagonal (4H-or 6H-SiC) and cubic silicon carbide (3C-SiC), which differ from each other by the ordering of the Si-C bilayers along the c-axis crystal direction. Among different polytypes of SiC, 3C-SiC has attracted specific interest due to its prominent properties such as high electron mobility and low interface trap density in MOSFET devices. Moreover, with a relatively small bandgap of 2.36 eV and suitable conduction and valence band positions, 3C-SiC has also been considered as a promising material for solar water splitting application, which provides a completely renewable approach to convert solar energy into storable hydrogen fuel. However, the growth of high-quality 3C-SiC remains a great challenge for decades. Graphene, a single layer of sp 2-bonded carbon atoms, has shown outstanding electronic properties and becomes the most promising candidate for next-generation electronic and optoelectronic devices. Epitaxial growth of graphene on SiC substrates by sublimation of Si from SiC provides a feasible route to fabricate wafer-scale device-quality graphene. The most advantage of this method is that a variety of devices can be processed directly on graphene/SiC without any transfer process, which is needed in the case of graphene produced by exfoliation or CVD on metals. During past years, the growth of monolayer (ML) graphene on hexagonal SiC (6H-SiC, 4H-SiC) substrates has been extensively studied. However, it is challenging to grow large-area and uniform multilayer graphene on hexagonal SiC substrates due to the stepbunching issue during the sublimation growth. Multilayer graphene has recently attracted great interest due to its tunable electronic properties for various electronic and optoelectronic applications. It has been shown that the electronic properties of multilayer graphene are strongly influenced by its stacking sequence. In particular, the rhombohedral stacking sequence (ABC stacking) has shown its potential to introduce a flat band energy dispersion at the K points of the Brillouin zone, which would result in many exotic phases of matter such as superconductivity. Among various SiC polytypes, 3C-SiC is predicted to be the most suitable substrate for the epitaxial growth of rhombohedral multilayer graphene. This thesis work mainly covers the sublimation growth of high-quality Si-face and C-face 3C-SiC on off-oriented 4H-SiC, exploring the proper parameter window for the growth of

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“…Then, a number of works demonstrating the feasibility of graphene synthesis on β-SiC/Si wafers of different orientations have been published . Mostly, these studies have been conducted on β-SiC (111) thin films [51][52][53][54][55][56][57][58][59][60][61][65][66][67][68][69][70][71][72][73][74][75][76][77][78][79][80][81] and single-crystalline SiC (111) wafers [62][63][64]. However, some studies have been carried out on β-SiC(001) [50, 61, 82-93, 101, 102] and even on polycrystalline β-SiC substrates [94].…”

Section: Introductionmentioning

confidence: 99%

Controllable Synthesis of Few-Layer Graphene on β-SiC(001)

Молодцова¹,

Чайка²,

Aristov³

2019

Silicon Materials

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Few-layer graphene exhibits exceptional properties that are of interest for fundamental research and technological applications. Nanostructured graphene with self-aligned domain boundaries and ripples is one of very promising materials because the boundaries can reflect electrons in a wide range of energies and host spinpolarized electronic states. In this chapter, we discuss the ultra-high vacuum synthesis of few-layer graphene on the technologically relevant semiconducting β-SiC/Si(001) wafers. Recent experimental results demonstrate the possibility of controlling the preferential domain boundary direction and the number of graphene layers in the few-layer graphene synthesized on the β-SiC/Si(001) substrates. Both these goals can be achieved utilizing vicinal silicon wafers with small miscuts from the (001) plane. This development may lead to fabricating new tunable electronic nanostructures made from graphene on β-SiC, opening up opportunities for new applications.

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Decoupling and ordering of multilayer graphene on C-face 3C-SiC(111)

Cited by 12 publications

References 24 publications

Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC

Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC

Growth of 3C-SiC and Graphene for Solar Water-Splitting Application

Controllable Synthesis of Few-Layer Graphene on β-SiC(001)

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