Tantalum nitride (Ta3N5) has gained
significant
attention as a potential photoanode material, yet it has been challenged
by material quality issues. Defect-induced trap states are detrimental
to the performance of any semiconductor material. Beyond influencing
the performance of Ta3N5 films, defects can
also accelerate the degradation in water during desired electrochemical
applications. Defect passivation has provided an enormous boost to
the development of many semiconductor materials but is currently in
its infancy for Ta3N5. This is in part due to
a lack of experimental understanding regarding the spatial and energetic
distribution of trap states throughout Ta3N5 thin films. Here, we employ drive-level capacitance profiling (DLCP)
to experimentally resolve the spatial and energetic distribution of
trap states throughout Ta3N5 thin films. The
density of deeper energetic traps is found to reach ∼2.5 to
6 × 1022 cm–3 at the interfaces
of neat Ta3N5 thin films, over an order of magnitude
greater than the bulk. In addition to the spatial profile of deep
trap states, we report neat Ta3N5 thin films
to be highly n-type in nature, owning a free carrier density of ∼9.74
× 1017 cm–3. This information, coupled
with the present understanding of native oxide layers on Ta3N5, has facilitated the rational design of a targeted
passivation strategy that simultaneously provides a means for catalyst
immobilization. Loading catalyst via silatrane moieties suppresses
the density of defects at the surface of Ta3N5 thin films by two orders of magnitude, while also reducing the free
carrier density of films by over one order of magnitude, effectively
dedoping the films to ∼2.40 × 1016 cm–3. The surface passivation of Ta3N5 films translates
to suppressed defect-induced trapping and recombination of photoexcited
carriers, as determined through absorption, photoluminescence, and
transient photovoltage. This illustrates how developing a deeper understanding
of the distribution and influence of defects in Ta3N5 thin films has the potential to guide future works and ultimately
accelerate the integration and development of high-performance Ta3N5 thin film devices.