2011
DOI: 10.1002/pssc.201000342
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Decoupling of a strained 3C‐SiC(111) thin film on silicon by He+ and O+ ion implantation

Abstract: This paper reports the successful reduction of tensile strain in a thin ion‐beam‐synthesized 3C‐SiC(111) layer on silicon. Significant relaxation is achieved by creating a near‐interface defect structure containing nanometric voids and dislocation loops by the implantation of He ions and subsequent thermal annealing. The structural features of this defect microstructure are investigated by transmission electron microscopy. High‐resolution X‐ray diffraction in a parallel beam configuration is used to quantify t… Show more

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