Deep-center photoluminescence in nitrogen-doped ZnSe

Hauksson, I.; Wang, S. Y.; Prior, K. A.; Cavenett, B.C.; Liu, W.; Skromme, Brian

doi:10.1103/physrevb.52.17184

Cited by 22 publications

(2 citation statements)

References 25 publications

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“…Fig. 1 shows the result of the fits for the highest excitation intensity and at a temperature T 4X2 K. This leads to the value S 0X5 AE 0X1, which is in agreement with previous results [6,7]. In addition, an increase of the excitation intensity slightly reduces the value of S. Indeed, at higher excitation intensities closer DAP are involved in the radiative recombination.…”

supporting

confidence: 89%

Photoluminescence of Nitrogen-Doped ZnSe Layers

German

Kartheuser²,

Soltani³

et al. 1998

phys. stat. sol. (b)

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ZnSe layers have been epitaxially grown by MOVPE on GaAs substrates and were doped with nitrogen plasma. Photoluminescence measurements at different light intensities and in the temperature range of 4.2 K to 80 K have been performed on the layers. It is shown that the presence of nitrogen leads to photoluminescence spectra revealing acceptor-and donor-bound exciton lines, together with a donor±acceptor pair (DAP) band at 2.69 eV and a free-to-bound (FB) transition accompanied by their longitudinal-optical (LO) phonon side bands. A detailed and coherent analysis of the position, shape and relative intensities of the spectral lines is carried out by means of an analytical model correlating the position of the zero-phonon lines to the relative intensities of the phonon side bands. The model includes central-cell correction and describes the effect of the charge carrier LO-phonon interaction in the framework of the adiabatic approximation within the envelope function approach. The same model is successfully used to analyse the excitation intensity and temperature dependence of the zero-phonon lines associated to the DAP and FB transitions. Comparison between experiment and theory leads to the following physical parameters: S 0X5 AE 0X1 for the Huang-Rhys factor; E A 112 AE 2 meV, r A 5X8 AE 0X5 A Ê for the acceptor ionization energy and radius, respectively, and E D 25 AE 2 meV; r D 24 AE 0X5 A Ê for the donor ionization energy and radius, respectively.Introduction. As ZnSe-based compounds are of promising use for optoelectronic devices operating in the blue-green range of the spectrum, great effort has been put towards the development of both n-type and p-type doped ZnSe layers. Even though nitrogen still remains the most suited component for p-type doping [1] the concentration of electrically active dopants remains low, especially with the MOVPE growth process. The nature and electronic properties of the impurities present in those layers are therefore of particular interest. Photoluminescence (PL) experiments are widely used to assess the presence of impurities in semiconductors. In the present work, we perform a detailed study of the spectral position and the structure of the emission lines associated to the donor±acceptor pair (DAP) recombination process. We show that the shape of the DA band provides a correlation between the longitudinal optical (LO) phonon emission, the charge distribution and binding energies of the impurities and we also analyse the influence of the excitation intensity and the measurement temperature on the DAP emission.

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supporting

confidence: 89%

Photoluminescence of Nitrogen-Doped ZnSe Layers

German

Kartheuser²,

Soltani³

et al. 1998

phys. stat. sol. (b)

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“…This energy value corresponds to the LO phonon energy in ZnSe of 31.5 meV [8]. The peak position of 2.686 eV fits well to the zero-phonon line of a donor-acceptor pair (DAP) emission, which arises from a recombination of a deep donor and the N-acceptor [8]. The origin of the peak at 2.618 eV, which also has a small shoulder at the low energy side (DE ¼ 20 meV), is not clear up to now.…”

Section: Growth Of Znse/mgs Superlatticesmentioning

confidence: 99%

High Reflectivity p-Type Doped Distributed Bragg Reflectors Using ZnSe/MgS Superlattices

Kruse

Alexe

Klude

et al. 2002

phys. stat. sol. (b)

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Undoped and p-type doped distributed Bragg reflectors (DBRs) have been grown by molecular beam epitaxy using ZnSe layers for the high refractive index material and ZnSe/MgS superlattices (SLs) for the low index material. The ZnSe/MgS SLs consist of 22.5 periods with a period length of 2.5 nm as confirmed by high-resolution X-ray diffraction measurements. A reflectivity of the p-type doped DBR higher than 99% at 522 nm has been achieved. The low temperature photoluminescence spectrum of the p-type doped DBR shows a strong donor-acceptor pair recombination peak at 2.686 eV.

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Zinc selenide (ZnSe) shallow donors, ionization energies

Landolt-Börnstein - Group III Condensed Matter

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Deep-center photoluminescence in nitrogen-doped ZnSe

Cited by 22 publications

References 25 publications

Photoluminescence of Nitrogen-Doped ZnSe Layers

Photoluminescence of Nitrogen-Doped ZnSe Layers

High Reflectivity p-Type Doped Distributed Bragg Reflectors Using ZnSe/MgS Superlattices

Zinc selenide (ZnSe) shallow donors, ionization energies

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