Deep defects in Cu2ZnSnS4 monograin solar cells

Temperature dependent electrical characterization of thin film Cu2ZnSnSe4solar cells

“…At high temperatures (T = 150 K-325 K), where grain boundary states do not contribute to capacitance, both equivalent circuits give excellent results. This low temperature (T = 10 K-150 K) behaviour, which requires the use of CPE and is present in the studied CZTSe thin film solar cells, was not seen in our previous research on monograin solar cells, where the role of grain boundaries was not so notable [7,8].…”

“…Defects have been studied by photoluminescence spectroscopy [3][4][5][6] and also by capacitive spectroscopy methods. In our previous works [7,8] we studied so-called monograin solar cells consisting of a microcrystal absorber material, and different defect levels were detected. In CZTSe two defect states were observed by admittance spectroscopy (AS).…”

Kësterite thin films for photovoltaics : a review

“…According to point-defect measurements, the kësterites are susceptible to higher carrier recombination than chalcopyrite [52]. Measurements of the deep defects of CZTS are reported here [53].…”

Defect levels in Cu2ZnSn(SxSe1−x)4 solar cells probed by current-mode deep level transient spectroscopy

“…Existence of Cu Zn deep level at E v þ 0.12 eV has also been experimentally identified by admittance spectroscopy. 25 The theoretical studies strongly suggest that the observed trap level E T1 in Cell 1 with an activation energy of 0.12 eV can be assigned to the Cu Zn (-/0) antisite defect. The second dominant defect level identified in Cell 1 (E T2 ) corresponds to a much deeper level with an activation energy of 0.32 eV which matches closely to the transition energy theoretically calculated for Cu Sn (2-/-) defect.…”