Deep donor levels in Sn-doped AlxGa1−xAs

Abstract

The properties of the Sn-doped AlxGa1−xAs alloys with various compositions have been studied by deep level transient spectroscopy and photocapacitance methods. Two deep donor levels with the thermal activation energies of 0.19 and 0.32 eV are found in all of the samples. Detailed data for the thermal emission and capture activation energies, optical ionization energies, and their composition dependence are given for the first time. Because their electronic properties are similar to that of the typical Si DX level in AlxGa1−xAs, it is concluded that both Sn-related levels are the DX-like levels.