Deep emissions of MBE-ZnTe on tilted GaAs substrate

Shigaura, G.; Ohashi, Masayuki; Ichinohe, Yoshihiro; Kanamori, M.; Kimura, N.; Suzuki, Takayuki; Suzuki, Kazuhiko; Imai, Kenichi

doi:10.1016/j.jcrysgro.2006.11.107

Cited by 12 publications

(5 citation statements)

References 10 publications

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“…[3][4][5][6][7][8] Based on previous experience, growth conditions, layer properties and, especially, interface structure can depend strongly on substrate orientation. 9 Hence it is necessary to investigate the growth of ZnTe on GaAs(211)B substrates by MBE and the structure of the interface by (S)TEM.…”

Section: Introductionmentioning

confidence: 99%

Microstructure of Heteroepitaxial ZnTe Grown on GaAs(211)B by Molecular Beam Epitaxy

Wang

Hou

Chang

et al. 2009

Journal of Elec Materi

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ZnTe was grown on GaAs(211)B by molecular beam epitaxy (MBE). Structural properties and strain relaxation at the ZnTe/GaAs(211)B interface were investigated by high resolution transmission electron microscopy (HRTEM) and scanning transmission electron microscopy (STEM). Application of digital image processing involving a filtered inverse fast Fourier transformation revealed an array of misfit dislocations at the interface and allowed strain relaxation to be estimated. Only one twin defect was observed in the HRTEM images, and details of this twin defect were investigated by STEM.

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Section: Introductionmentioning

confidence: 99%

Microstructure of Heteroepitaxial ZnTe Grown on GaAs(211)B by Molecular Beam Epitaxy

Wang

Hou

Chang

et al. 2009

Journal of Elec Materi

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“…1, where assignments are given based on prior reports. [40][41][42][43][44][45][46][47][48][49][50][51][52] The ZnSe and ZnTe spectra [Figs. 1(a Cu.…”

Section: Methodsmentioning

confidence: 99%

Structural and chemical disorder in semiconductors under pressure: Evidence in II–VI’s, role of photoactive defects, material predictions

Weinstein¹,

Lindberg²,

Gross³

2017

Jpn. J. Appl. Phys.

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Hydrostatic pressure can sometimes generate structural and chemical disorder within crystals. We review pressure-Raman experiments on ZnSe, ZnTe, and CdSe showing evidence for these phenomena. In ZnSe and ZnTe Raman spectra recorded with low laser flux show only pre-transition structural disorder on approaching the lowest pressure transition, as is typical for first-order phase changes. Spectra recorded with higher laser flux (sub-band-gap) observe precipitation of anion nanocrystals. This behavior is absent in CdSe. A model is developed that considers the role of crystal defects. The defects promote plastic deformation assisted by photoexcitation of Jahn–Teller distortions. Nanocrystals can precipitate on dislocations in deformed regions under energetically favorable conditions. Model calculations based on theories for precipitation in metals account for the influence of pressure on the nanocrystal formation in ZnSe and ZnTe, and explain its absence in CdSe. Material maps are constructed to predict the tendencies for similar precipitation in III–V, II–VI, I–VII, and chalcopyrite crystals.

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“…Сьогоднi поширена узгоджена думка про те, що рiзкi лiнiї випромiнюваня, якi спостерiгаються за низьких температур i енерґiй, дещо нижчих за ширину забороненої зони, пояснюються наявнiстю вiльних екситонiв й екситонiв, пов'язаних iз неглибокими пастками. Широкi смуги люмiнесценцiї, якi спостерiгаються в дiлянцi 2.3-2.1 еВ, вiдносять до випромiнювальної рекомбiнацiї донорно-акцепторних пар, локалiзованих на домiшках або дефектах [27][28][29][30]. Подiбно до iнших напiвпровiдникiв, фiзичнi процеси, пов'язанi з переходами носiїв у заборонену зону в ZnTe, зазнають сильного впливу власних дефектiв i домiшок.…”

Section: результати та обговоренняunclassified

Scintillation properties and X-ray luminescence spectra of zinc telluride at cryogenic temperatures

Mikhailik¹,

Galkin²,

Rudko³

et al. 2017

J. Phys. Stud.

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Робота присвячена вивченню спектрiв рентґенолюмiнесценцiї та сцинтиляцiйних характеристик нелеґованого ZnTe за низьких температур аж до 6 K. У зв'язку з iстотним термiчним гасiнням сцинтиляцiї пiд час збудження α-частинками спостерiгалися тiльки за охолодження зразкiв до температур, нижчих вiд T = 150 K. Випромiнювання кристалiв зумовлене радiацiйною рекомбiнацiєю дiрок, захоплених вакансiями Zn, й електронiв, локалiзованих на плитких рiвнях домiшок i дефектiв. Iнтенсивнiсть сцинтиляцiй зростала з подальшим охолодженням. Установлено, що пiд час збудження α-частинками нелеґований ZnTe характеризується дуже конкурентоздатним свiтловим виходом на рiвнi 117±20% порiвняно зi сцинтилятором CaWO4. Цi данi засвiдчують перспективнiсть застосування ZnTe як сцинтиляцiйного детектора в крiогенних експериментах.

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Deep emissions of MBE-ZnTe on tilted GaAs substrate

Cited by 12 publications

References 10 publications

Microstructure of Heteroepitaxial ZnTe Grown on GaAs(211)B by Molecular Beam Epitaxy

Microstructure of Heteroepitaxial ZnTe Grown on GaAs(211)B by Molecular Beam Epitaxy

Structural and chemical disorder in semiconductors under pressure: Evidence in II–VI’s, role of photoactive defects, material predictions

Scintillation properties and X-ray luminescence spectra of zinc telluride at cryogenic temperatures

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