Deep Insight into DC/RF and Linearity Parameters of a Novel Back Gated Ferroelectric TFET on SELBOX Substrate for Ultra Low Power Applications

Singh, Ashish Kumar; Tripathy, Manas Ranjan; Singh, Prince Kumar; Baral, Kamalaksha; Chander, Sweta; Jit, Satyabrata

doi:10.1007/s12633-020-00672-2

Cited by 15 publications

(7 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The g m1 , g m2 , and g m3 of the TFET‐determined device gain is illustrated by Equations (1)–(3). Enhancing the carrier transport efficiency leads to improve g m , a vital aspect for the analog application 28,29

{g}_{\mathrm{m}1}=\frac{\partial {I}_{\mathrm{DS}}}{\partial {V}_{\mathrm{GS}}},

{g}_{\mathrm{m}2}=\kern0.5em \frac{\partial {I}_{{\mathrm{DS}}^2}}{\partial^2{V}_{\mathrm{GS}}},

$$ {g}_{\mathrm{m}3}=\kern0.5em \frac{\partial {I}_{{\mathrm{DS}}^3}}{\partial^3{V}_{\mathrm{GS}}}.

…”

Section: Resultsmentioning

confidence: 99%

“…The lower value of IMD3 ensures better device linearity. 28 Here, L-shaped dielectrically modulated biosensor realizes superior IIP3 and proceeding peaks at low voltage of V GS . The change of IMD3 along V GS is demonstrated in Figure 9B.…”

Section: K K K Kmentioning

confidence: 95%

“…Enhancing the carrier transport efficiency leads to improve g m , a vital aspect for the analog application. 28,29…”

Section: Impact Of Neutral Biomolecules On Transconductance By Varyin...mentioning

confidence: 99%

See 2 more Smart Citations

Sensitivity, linearity, and noise evaluation of L‐shaped dielectrically modulated label free tunnel field‐effect transistor biosensor

Singh,

Sahu

2024

Int J Numerical Modelling

View full text Add to dashboard Cite

This research article examines a L‐shaped dielectrically modulated label free TFET (L‐DM‐TFET) biosensor for the purpose of detecting different biomolecules using a label‐free biosensing detection technique. The proposed structure allows for the recognition of biomolecules by modulating various electrical properties, such as the drain current, transconductance, and linearity parameters. The source region of the proposed TFET incorporates a SiGe (source)/Si (channel) heterojunction, utilizing a low bandgap material of SiGe. This heterojunction is employed to enhance the ON‐state current of the devices. The materials used and the fabrication steps involved in our proposed device are compatible with complementary metal‐oxide‐semiconductor (CMOS) technology. This analysis is conducted using a calibrated Silvaco technology computer‐aided design (TCAD) simulator. Additionally, by considering a dielectric constant range of 1–12, we calculate various figure of merits (FOMs) parameters for the device. These include evaluation of linearity, sensitivity, and noise characteristics. Furthermore, we have conducted an analysis of linearity FOMs, such as VIP2, VIP3, IIP3, and IMD3 for the proposed device under study. Additionally, the linearity analysis of the presented tunneling FET (TFET) indicates the device's excellent performance in distortionless switching operations. Consequently, the L‐shaped dielectrically modulated biosensor holds potential suitability for high‐speed circuit designs.

show abstract

{g}_{\mathrm{m}1}=\frac{\partial {I}_{\mathrm{DS}}}{\partial {V}_{\mathrm{GS}}},

{g}_{\mathrm{m}2}=\kern0.5em \frac{\partial {I}_{{\mathrm{DS}}^2}}{\partial^2{V}_{\mathrm{GS}}},

$$ {g}_{\mathrm{m}3}=\kern0.5em \frac{\partial {I}_{{\mathrm{DS}}^3}}{\partial^3{V}_{\mathrm{GS}}}.

…”

Section: Resultsmentioning

confidence: 99%

Section: K K K Kmentioning

confidence: 95%

See 1 more Smart Citation

Sensitivity, linearity, and noise evaluation of L‐shaped dielectrically modulated label free tunnel field‐effect transistor biosensor

Singh,

Sahu

2024

Int J Numerical Modelling

View full text Add to dashboard Cite

show abstract

“…Linearity and distortion are other essential characteristics to be checked before applying a device to any circuit application. Linearity and distortion analysis using different matrices such as VIP2, VIP3, IIP3, IMD3, 1‐dB compression point, HD2, HD3, and higher‐order transconductance coefficient are efficient and time‐consuming methods 16–20 . There are some advantages in cylindrical gate TFETs with a source pocket doping in terms of analog, linearity, and RF performance 21 .…”

Section: Introductionmentioning

confidence: 99%

“…Linearity and distortion analysis using different matrices such as VIP2, VIP3, IIP3, IMD3, 1-dB compression point, HD2, HD3, and higher-order transconductance coefficient are efficient and time-consuming methods. [16][17][18][19][20] There are some advantages in cylindrical gate TFETs with a source pocket doping in terms of analog, linearity, and RF performance. 21 The effect of adding a ferroelectric layer on RF/analog and linearity analysis for the ferroelectric fin-FET is also studied.…”

Section: Introductionmentioning

confidence: 99%

Technology computer‐aided design simulation of G e‐source double‐gate S i‐tunnel Field Effect Transistor: Radio frequency and linearity analysis

Baruah

Debnath

Baishya

2022

Int J RF Mic Comp-Aid Eng

View full text Add to dashboard Cite

This article presented a thorough investigation of direct current (DC), analog/ radio frequency (RF), and linearity performance of a proposed Ge-source double gate planner Si-tunnel field-effect transistor (TFET) considering different parameter variations using Sentaurus TCAD 2-D device simulator. The analyses are performed using various quality matrices such as transconductance (g m ), total gate capacitance (C gg ), unity gain cut-off frequency (f T ), gainbandwidth product (GBP), transconductance frequency product (TFP), etc. It can be perceived that the inclusion of source/channel junction pocket, low bandgap source material, high k gate dielectric, and dual k spacer technology can improve the TFET performances in terms of on-current (I ON ), off-current (I OFF ), on-off current ratio (I ON / I OFF ) and subthreshold swing (SS) at a supply voltage V DS = 0.7 V. In this article, we used a non-quasi-static (NQS) smallsignal model to analyze the behavior of the proposed device in high-frequency regions. Based on this, the small-signal admittance parameters were validated up to 1 THz. The proposed TFET produced RF figures of merit (FoM), cut-off frequency (f T ), and maximum oscillation frequency (f max ) in the terahertz range at V DS = V GS = 1 V. Linearity and distortion parameters considered here are VIP2 (interpolated input voltage at which first and second harmonics are equal), VIP3 (interpolated input voltage at which first and third harmonics are similar), IIP3 (third-order input intercept point), IMD3 (third-order intermodulation distortion), 1-dB compression point, HD2 (second-order harmonic), HD3 (third-order harmonic) and THD (total harmonic distortion) for different supply voltages. According to the study, the proposed TFET can provide improved RF and linearity performance, ensuring device reliability in lowpower, high-frequency applications. K E Y W O R D Sband to band tunneling (BTBT), cut-off frequency (f T ), gain-bandwidth product (GBP), linearity, transconductance frequency product (TFP), tunnel field-effect transistor (TFET)

show abstract

Comprehensive characterization of a high‐performance double heterojunction InGaAs pHEMT for linear power‐efficient amplifiers applications

Sultana,

Naima,

Alam

et al. 2024

Int J Numerical Modelling

View full text Add to dashboard Cite

This article centers its attention on the phenomenon of electrostatics, linearity, analogue, and RF performance of a 0.5 μm × (2 × 100) μm double heterojunction AlGaAs/InGaAs/GaAs pHEMT using on‐wafer DC and RF measurements up to 50 GHz. With a high ION/IOFF ratio (1.21 × 107) and low subthreshold slope (72.7 mV/dec), a flat and high transconductance over a wide range of Vgs has been achieved for the tested device. Furthermore, the input intercept and higher‐order voltage intercept point both attained large values with low intermodulation and harmonic distortion. Regarding RF parameters, the intrinsic gain has been achieved up to 28 dB. The GBW up to 750 GHz was attained, with the highest fT and fmax values being 24.5 GHz and 99.3 GHz, respectively. Since the device has very low intrinsic capacitance, parameters like TFP, GFP, and GTFP also showed excellent results. The high intrinsic gain and TGF indicate ample potential of the device for use as an amplifier. Investigating the parameters reveals the device to have very good linearity and amplifying capability.

show abstract

Deep Insight into DC/RF and Linearity Parameters of a Novel Back Gated Ferroelectric TFET on SELBOX Substrate for Ultra Low Power Applications

Cited by 15 publications

References 26 publications

Sensitivity, linearity, and noise evaluation of L‐shaped dielectrically modulated label free tunnel field‐effect transistor biosensor

Sensitivity, linearity, and noise evaluation of L‐shaped dielectrically modulated label free tunnel field‐effect transistor biosensor

Technology computer‐aided design simulation of G e‐source double‐gate S i‐tunnel Field Effect Transistor: Radio frequency and linearity analysis

Comprehensive characterization of a high‐performance double heterojunction InGaAs pHEMT for linear power‐efficient amplifiers applications

Contact Info

Product

Resources

About