Deep insights on the performance of different structures of InGaN-based tandem photovoltaic cells: path towards the design of high efficiency PV modules

Marouf, Y.; Dehimi, L.; Bencherif, H.; Pezzimenti, F.; Younsi, Z.; Albaqami, Munirah D.; Shahatha, Sara H.; Mohammad, M. R.; Toki, Gazi F. I.; Dwivedi, D. K.; Hossain, M. Khalid

doi:10.1007/s12596-024-02045-z

J Opt

2024

DOI: 10.1007/s12596-024-02045-z

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Deep insights on the performance of different structures of InGaN-based tandem photovoltaic cells: path towards the design of high efficiency PV modules

Y. Marouf,

L. Dehimi,

H. Bencherif

et al.

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Investigation on indium concentration in two-terminal tandem indium gallium nitride solar cells by SCAPS-1D

Omar,

Rashid,

Pakhuruddin

2024

Phys. Scr.

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Indium gallium nitride (InGaN) thin-film solar cell is a promising photovoltaic (PV) device. InGaN’s bandgap is tunable from 0.7 to 3.4 eV and it exhibits a high absorption coefficient exceeding 105 cm-1. Besides, InGaN solar cells can be used in tandem configuration, to effectively absorb the solar spectrum. Previous works found that increased indium (In) concentration leads to inverse relationship between open-circuit voltage (Voc) and power conversion efficiency (PCE) of the solar cell. This leads to deleterious device performance. This study aims to assess the performance of two-terminal InGaN tandem solar cells using SCAPS-1D simulation software. The findings revealed maximum short-circuit current density (Jsc) of 26.19 mA/cm2, open-circuit voltage (Voc) of 2.13 V, fill factor (FF) of 89.68%, and PCE of 30.17% from the tandem device. The results indicate that higher In concentration enhances light absorption and the overall PCE, with tandem cells outperforming single-junction cells. This study makes a valuable contribution to the advancement of high-efficiency solar technology based on InGaN.

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Investigation on indium concentration in two-terminal tandem indium gallium nitride solar cells by SCAPS-1D

Omar,

Rashid,

Pakhuruddin

2024

Phys. Scr.

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show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

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Deep insights on the performance of different structures of InGaN-based tandem photovoltaic cells: path towards the design of high efficiency PV modules

Cited by 1 publication

References 78 publications

Investigation on indium concentration in two-terminal tandem indium gallium nitride solar cells by SCAPS-1D

Investigation on indium concentration in two-terminal tandem indium gallium nitride solar cells by SCAPS-1D

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