Deep-level defects in high-voltage AlGaAs p–i–n diodes and the effect of these defects on the temperature dependence of the minority carrier lifetime

Abstract

The variation of the effective lifetime of minority carrier lifetime τeff with temperature has been studied in the temperature range 300–580 K in AlxGa1−xAs base regions of p+–p0–i–n0–n+ high-voltage GaAs–AlGaAs diodes grown by liquid-phase epitaxy. It was found by using deep level transient spectroscopy that the emission/capture of electrons and holes in AlxGa1−xAs p0–i–n0 epitaxial layers is governed by the DX− states of the DX center formed by Se/Te background impurities. The Arrhenius plots associated with the τeff were used to determine the activation energy of the hole capture to the DX− level to be Ec = 159 meV. It is shown that the thermal capture of holes to the DX− level determines the relaxation time of nonequilibrium carriers in the AlxGa1−xAs base layers as well as its temperature dependence.

Correlation between deep level traps and reverse recovery of GaAs p–i–n diodes before and after neutron irradiation

“…In this paper, we consider the devices based on the high-voltage (with reverse voltages of hundreds of volts) GaAs p 0 -i-n 0 structures grown using liquid phase epitaxy (LPE) with controlled distribution of residual impurities and intrinsic deep level (DL) defects. 3,4) This technology enables the manufacturing of highspeed devices with high pulse repetition rates operating at temperatures up to 200 °C-300 °C and higher. 3,4) The dynamic characteristics of gallium arsenide diodes (including the minority carrier lifetime and voltage drops rise time), as well as the voltage blocked by diode structures, are significantly affected by DL defects formed during epitaxial growth of structures.…”

“…3,4) This technology enables the manufacturing of highspeed devices with high pulse repetition rates operating at temperatures up to 200 °C-300 °C and higher. 3,4) The dynamic characteristics of gallium arsenide diodes (including the minority carrier lifetime and voltage drops rise time), as well as the voltage blocked by diode structures, are significantly affected by DL defects formed during epitaxial growth of structures. 3,4) Modern manufacturing technology for bipolar diodes includes methods to control the radiation effects on semiconductor device characteristics.…”

“…3,4) The dynamic characteristics of gallium arsenide diodes (including the minority carrier lifetime and voltage drops rise time), as well as the voltage blocked by diode structures, are significantly affected by DL defects formed during epitaxial growth of structures. 3,4) Modern manufacturing technology for bipolar diodes includes methods to control the radiation effects on semiconductor device characteristics. This involves introducing controlled point defects into the semiconductor layers after manufacturing.…”

“…However, the impact of these defects depends not only on the chosen semiconductor material, but also on the conditions of the device structures manufacturing processes, which, in particular, can affect the number and types of DL traps (defects) in the base layers of power devices. [3][4][5][6][7][8][9][10][11] The defects responsible for nonradiative recombination in semiconductors have been studying using DL transient spectroscopy (DLTS). [3][4][5][6][7][8][9][10][11] The definition of the parameters of DLs defects, such as thermal activation energies (E t ), capture cross sections (σ p ), and concentrations (N t ) is essential for understanding their role in the recombination process and for evaluating the minority carrier lifetime in semiconductor materials.…”

“…[3][4][5][6][7][8][9][10][11] The defects responsible for nonradiative recombination in semiconductors have been studying using DL transient spectroscopy (DLTS). [3][4][5][6][7][8][9][10][11] The definition of the parameters of DLs defects, such as thermal activation energies (E t ), capture cross sections (σ p ), and concentrations (N t ) is essential for understanding their role in the recombination process and for evaluating the minority carrier lifetime in semiconductor materials. The reverse recovery method also used to direct measure the minority carrier lifetimes in bipolar pulsed p-i-n junction devices.…”