Deep Level in InP Crystal Grown by the Horizontal Bridgman Method under Controlled Phosphorus Vapor Pressure

Abstract

InP crystals were grown by the horizontal Bridgman (HB) method under a controlled ambient phosphorus vapor pressure. The relationship between the phosphorus vapor pressure and crystal defects was investigated. Crystals grown under a lower phosphorus vapor pressure have an In-rich composition. P-vacancy related photoluminescence (PL) emission at 1.1 eV decreased in growth under a higher phosphorus vapor pressure. The ion density at E c − 1.1 eV also decreased according to results of photocapacitance measurement. It was considered that crystals became a P-rich composition from an In-rich one by growth under higher phosphorus vapor pressure of 23 or 29 atm. This corresponds to the results of coulometric titration analysis. In the InP crystal grown under the phosphorus pressure of 33 atm, the density of the deep level was undetectable by PL or photocapacitance measurement.

Approach for defect suppression and preparation of high quality semi-insulating InP

“…However, defects and defect impurity complexes have a strong tendency to form due to the inevitable stoichiometry deviation towards indium enrichment and impurities incorporated in the material [4][5][6][7][8]. These defects participate in the electrical compensation and influence the properties of as-grown and annealed SI-InP [9][10][11].…”