Deep-level traps in lightly Si-doped <i>n</i>-GaN on free-standing <i>m</i>-oriented GaN substrates

Yamada, Hisashi; Chonan, Hiroshi; Takahashi, Tokio; Yamada, Takatoshi; Shimizu, Mitsuaki

doi:10.1063/1.5011362

Cited by 16 publications

(15 citation statements)

References 39 publications

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“…The possible physical origin of the trap T1 at EC -0.18 eV is the nitrogen-vacancy (VN) [34,35]. The deep-level trap T2 at EC -0.56 eV can be attributed to the nitrogen antisite (NGa)-related defect [36,37] in the n-type homoepitaxial GaN layer.…”

Section: Interface States and Deep-level Trapsmentioning

confidence: 99%

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

Raja

Raynaud

Sonneville

et al. 2022

Microelectronics Journal

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Section: Interface States and Deep-level Trapsmentioning

confidence: 99%

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

Raja

Raynaud

Sonneville

et al. 2022

Microelectronics Journal

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“…[45,46,[53][54][55] Several studies found those traps not only to be associated with carbon but also with the yellow luminescence around 2.2 eV. [47,[56][57][58] 2.1.1. Yellow Luminescence and the C N Acceptor Level: YL1…”

Section: Luminescence Of Single Carbon Defectsmentioning

confidence: 99%

“…[101] Based on the early GGA and LDA-predicted shallow C N acceptor level, blue luminescence bands in C-doped GaN are sometimes proposed to originate from DAP-type transitions between the C Ga donor level and the C N acceptor level. [46,57,88,98,103,104] Regarding the considerably deeper nature of the C N acceptor level derived by state-of-the-art first-principles calculations (see Section 2.1), this attribution should be revised. The luminescence band around 3.0 eV detected in GaN grown by MOCVD and HVPE might be associated with the C N À H irelated BL2.…”

Section: High C Concentration: Carbon On Ga Site -C Gamentioning

confidence: 99%

Current Status of Carbon‐Related Defect Luminescence in GaN

Zimmermann

Beyer

Röder

et al. 2021

Physica Status Solidi (a)

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Gallium nitride (GaN) has become an indispensable compound semiconductor due to its numerous applications in opto- [1,2] and microelectronic [3,4] devices. GaN-based light emitting diodes and laser diodes show higher efficiencies than competing materials and, by alloying with Al or In, the bandgap can cover both the visible and UV spectral range. [5] In addition, AlGaN/GaN heterostructures lead to the formation of a 2D electron gas (2DEG) at the AlGaN/GaN interface, which enables high-frequency switching devices. [6,7] Furthermore, due to the large breakdown voltage and thermal stability, GaN is the perfect candidate for high-power applications. [8,9] As a prerequisite for GaN-based power electronic devices, highly insulating buffers are required. [10,11] Here, carbon doping plays a major role to compensate for donor impurities, which occur even in nominally undoped GaN films. However, the role of carbon-related defects in heterojunction field effect transistors is multiple. They were shown to play a major role in the buffer transport mechanisms generally [12] and to contribute to current collapse [13,14] as well as a dynamical shift of the threshold voltage [11,15] in the devices.Advancements in the field of GaN growth resulted in bulk material of improved structural quality, often with dislocation densities below 10 6 cm À2 . [16,17] As a consequence, the influence of point defects as a limiting factor of device performance is gaining importance. [18][19][20] Therefore, a better understanding of point defects in GaN is required to improve device performance further and to control unwanted side effects.To study optically active point defects in semiconductors, photoluminescence (PL) is one of the experimental techniques most frequently used. The impact of carbon on the luminescence properties is, without doubt, one of the most debated subjects related to point defects in GaN. Although those discussions reach back more than 40 years, [21] considerable progress in the understanding of carbon-related point defect levels was made in the last decade.Two main factors greatly improved the understanding of carbon-related defect levels in GaN. On one hand, the implementation of hybrid functionals in density functional theory (DFT) accounts for carrier localization at acceptor species. This led to vast changes in the predicted energy values of charge state

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“…For the trap parameters, the energy level below the conduction band and the capture cross section were fixed at 0.6 eV and 5.0 × 10 −15 cm 2 for all GaN layers and the substrate, respectively [36]. Approximately 0.6 eV for the trap's energy level is a common value for the experimental results and is observed for the GaN grown on not only SiC but also GaN substrates [8,9,27,[36][37][38][39][40]. The trap concentration of the channel layer was fixed to be at as low as 1.0 × 10 15 cm −3 [37].…”

Section: Device Structures Of Gan Hemts On Gan Substratesmentioning

confidence: 99%

A simulation study of the impact of traps in the GaN substrate on the electrical characteristics of an AlGaN/GaN HEMT with a thin channel layer

Oishi

Ito

2021

J Comput Electron

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GaN substrates are promising candidates for GaN high electron mobility transistors (HEMTs) due to their epitaxial layer growth with a low defect density. In this study, technology computer-aided design simulations were executed to design the GaN HEMTs on semi-insulating GaN substrates with thin channel layers. Traps in the GaN substrates played a role in suppressing drain-leakage currents, although degrading transient responses changed the bias from off to on-state for the 0.02-μm thin channel layer. A trade-off relationship between the drain-leakage current and transient response is occurred by changing the trap concentration in the GaN substrates. The AlGaN back-barrier structure has been found to be highly effective in suppressing the drain-leakage current in low-trap-concentration GaN substrates. The trade-off relationship improved by adopting the back-barrier layers, and the maximum drain current decreased. The drain-current reduction compensated by increasing the Al content in the barriers without degrading the trade-off relationship. Therefore, for GaN HEMTs that have low-trap-concentration GaN substrates combined with the back-barrier layer, a high-Al-content barrier have characteristics that are favorable for the trade-off relationship in the case of thin channel layers. Moreover, the traps in GaN substrates were found to affect low-frequency S21, which is important for linearity of the power amplifier, as critically as the transient responses.

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Deep-level traps in lightly Si-doped n-GaN on free-standing m-oriented GaN substrates

Cited by 16 publications

References 39 publications

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

Current Status of Carbon‐Related Defect Luminescence in GaN

A simulation study of the impact of traps in the GaN substrate on the electrical characteristics of an AlGaN/GaN HEMT with a thin channel layer

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