Deep levels in tungsten doped n-type 3C–SiC

Abstract

Tungsten was incorporated in SiC and W related defects were investigated using deep level transient spectroscopy. In agreement with literature, two levels related to W were detected in 4H–SiC, whereas only the deeper level was observed in 6H–SiC. The predicted energy level for W in 3C–SiC was observed (EC−0.47 eV). Tungsten serves as a common reference level in SiC. The detected intrinsic levels align as well: E1 (EC−0.57 eV) in 3C–SiC is proposed to have the same origin, likely VC, as EH6/7 in 4H–SiC and E7 in 6H–SiC, respectively.

Role of screening in the density functional applied to transition-metal defects in semiconductors

“…For all of these defects, the structure and the corresponding ionization energies are well established from experiments [21][22][23]25]. In addition, we investigate tungsten (W) in 4H SiC because W-related ionization energies have been detected recently [24]. In this case, the origin of the W-related centers are not ambiguously identified.…”

Asymmetric Split-Vacancy Defects in SiC Polytypes: A Combined Theoretical and Electron Spin Resonance Study

“…The motivation of this selection was twofold: (i) experimental data were available for most of these impurities in SiC [13, 22,23], which made a comparison between theory and experiment possible, (ii) the trends could be studied among 4s 2 3d 2 -3d 4 M defects and among 4s 2 3d 4 -6s 2 5d 4 M defects (see Fig. 1).…”

Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC

“…It is known, that the valence bands of the different SiC-polytypes [31] align and previously it was observed, that also intrinsic defects align [29,32]. Hemmingsson et al [16] detected a multistable defect present in 6H-SiC.…”