Deep levels of nitrogen vacancy complexes in graphite-like boron nitride

Grinyaev, S. N.; Конусов, Ф. В.; Лопатин, В. В.

doi:10.1134/1.1451015

Cited by 20 publications

(8 citation statements)

References 16 publications

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“…This defect-related luminescence forms a wide band with a phonon-induced substructure, which is characterized with two excitation bands resulting from two absorption bands of defects. Nevertheless, the defects forming the luminescence center remain unknown [10,11]. The present investigation allows for the suggestion that these defects are situated either on the surface of the material or close to this surface being sensitive to oxygen from the gas surrounding the material.…”

Section: Resultsmentioning

confidence: 97%

Influence of Air, Oxygen, Nitrogen and Argon on 400 nm Luminescence in Hexagonal Boron Nitride

Korsaks¹,

Bērziņa²,

Trinklere³

2012

Latvian Journal of Physics and Technical Sciences

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The investigation is devoted to the influence of different surrounding gases on the defect-related luminescence in hexagonal boron nitride (hBN). The photoluminescence spectra of hBN powder were measured for an hBN sample placed in different surroundings formed by ambient air, vacuum, as well as oxygen, nitrogen and argon gases. It was found that the 400 nm luminescence caused by native defects in hBN is sensitive to the oxygen gas and ambient air. Presence of oxygen gas around hBN considerably reduces the intensity of this luminescence. The results evidence that hBN powder can successfully be applied as the material for oxygen sensors.

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Section: Resultsmentioning

confidence: 97%

Influence of Air, Oxygen, Nitrogen and Argon on 400 nm Luminescence in Hexagonal Boron Nitride

Korsaks¹,

Bērziņa²,

Trinklere³

2012

Latvian Journal of Physics and Technical Sciences

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“…The nitrogen-vacancy electron states were calculated by the method of an extended unit cell (4×4×2) containing 64 atoms [17]. The wave functions of the defect crystal were determined in the basis of 30 lower states of an ideal crystal.…”

Section: The Charge Neutrality Level In W-almentioning

confidence: 99%

The charge neutrality level in w-AlxGa1−x N solid solutions

2006

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537.311.322Energy positions of the charge electroneutrality level (CNL) and neutral vacancy levels of nitrogen are calculated for w-GaN, w-AlN, and w-Al x Ga 1-x N versus solid-solution composition x in the virtual-crystal approximation. It is shown that within the whole range of the w-Al x Ga 1-x N compositions, the CNL is located in the upper half of the band gap, which results in the n-type conductivity of this material upon exposure to high-energy radiation.The concept of local charge electroneutrality (the "neutral" point) is widely used for analyzing energy-level diagrams of unstressed interfaces, estimating electrophysical characteristics of defect semiconductors, and calculating equilibrium levels of doping materials by chemical impurities [1][2][3][4][5][6][7]. The charge electroneutrality level acts as a fundamental crystal parameter identical for all isotype semiconductors with similar type of chemical bonds. Thus, within a unified concept, we can obtain the most important parameters of interfaces (Schottky-barrier height and band discontinuities in semiconductor heteropairs), calculate the electrophysical properties (conductivity type, limiting Fermi level, and specific-resistance rate) of defect semiconductor materials upon exposure to high-energy radiation or severe plastic deformation, and estimate the limiting equilibrium levels of semiconductor doping by hydrogen-like (shallow) chemical impurities. That is why this problem currently attracts considerable attention.In recent years, the group A 3 N nitrides including solid solutions and heterostructures on their basis are of great interest as candidate materials for rf electronics and semiconductor optics. However, the practical use of these compounds is limited by the high concentration of growth defects, mainly in the nitrogen sublattice (~10 19 cm -3 ), caused by high synthesis temperatures and volatility of the nitrogen components. The exposure to high-energy radiation is known to change the electron characteristics of materials (conductivity type, specific-resistance rate, and Fermi-level position) due to the formation of defect states in the band gap of the semiconductor crystal. This is widely used in radiation technology to control electrophysical, optical, recombination, and other properties of semiconductors. These studies are of great importance for investigations into tolerance of semiconductor materials and devices to high-energy radiation. Hence, studying the intrinsic lattice defects and their influence on the properties of wide-band A 3 N group nitrides is one of the most topical problems of materials science and technology.In this work, the energy dependence of the local charge electroneutrality level in w-GaN, w-AlN, and solid solutions on their bases is studied using the calculation methods we developed earlier. The correlation between the CNL position and the energy positions of neutral vacancy levels for nitrogen (neutral nitrogen vacancy is one of the major growth defects in these compounds) is analyzed.The band structure of w...

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“…Using PP and expanded unit cell methods, it was found that Nvacancies in BN sheet, as well as di-and trivacancional clusters including neighbor defects in BN layer, are characterized by small binding energies [80]. Calculated spectra and oscillator strengths allow to interpret local bands of the optical absorption in pyrolitic h-BN crystals before and after irradiation by fast-neutrons, protons, and C-ions.…”

Section: Boron Nitride Sheetmentioning

confidence: 99%