Deep-oxide planar buried-heterostructure AlGaAs–GaAs quantum well heterostructure laser diodes

Data are presented on the planar (top–down) oxidation of graded AlxGa1−xAs upper confining layers of quantum well heterostructures in order to realize high resolution square-edge lasers (or waveguides). A model is developed to facilitate composition grading of AlxGa1−xAs for vertical-wall (square corner or edge) planar oxidation at convenient oxidation times and tolerances. A simple AlGaAs–GaAs quantum well laser structure is used to demonstrate the square-wall (square-corner) planar oxidation method.

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Deep-oxide planar buried-heterostructure AlGaAs–GaAs quantum well heterostructure laser diodes

Cited by 6 publications

References 19 publications

Influence of buffer surface preparation on the quality of Al x Ga1-x As/GaAs quantum wells studied by optical orientation experiments

Influence of buffer surface preparation on the quality of Al x Ga1-x As/GaAs quantum wells studied by optical orientation experiments

Negative spin polarization observed by the Hanle effect in quantum wells grown on processed surfaces

Planar anisotropic oxidation of graded AlGaAs for high resolution vertical-wall current and light guiding in laser diodes

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