Deep‐Red InP Core‐Multishell Quantum Dots for Highly Bright and Efficient Light‐Emitting Diodes

Pan, Heng; Liu, Xiaonan; Jin, Geng Bang; Liu, Fangze; Shen, Huaibin; Li, Hongbo

doi:10.1002/adom.202300612

Cited by 11 publications

(7 citation statements)

References 62 publications

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“…It corresponded to the Zn 3s corelevel signal attributed to the Zn−Se bonds. 35,36 After NH 4 PF 6 surface treatment, the signal intensity of the InPO x species is slightly weaker than that of the pristine InP/ZnSe QDs, benefiting from the surface etching and passivation effect of PF 6 − ions. Especially, both the NH 4 + peak (401.8 eV) and NH 2 peak (399.5 eV) are found in N 1s spectra of the NH 4 PF 6 -treated InP/ZnSe QDs (Figure 3c), indicating that protonated ammonium ligands from OAm and NH 4 + cations are present on the surface of InP/ZnSe QDs.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Surface Passivation toward Multiple Inherent Dangling Bonds in Indium Phosphide Quantum Dots

Sun,

Hou,

Kong

et al. 2024

Inorg. Chem.

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Indium phosphide (InP) quantum dots (QDs) have become the most recognized prospect to be less-toxic surrogates for Cd-based optoelectronic systems. Due to the particularly dangling bonds (DBs) and the undesirable oxides, the photoluminescence performance and stability of InP QDs remain to be improved. Previous investigations largely focus on eliminating P− DBs and resultant surface oxidation states; however, little attention has been paid to the adverse effects of the surface In−DBs on InP QDs. This work demonstrates a facile one-step surface peeling and passivation treatment method for both In-and P−DBs for InP QDs. Meanwhile, the surface treatment may also effectively support the encapsulation of the ZnSe shell. Finally, the generated InP/ZnSe QDs display a narrower full width at half-maximum (fwhm) of ∼48 nm, higher photoluminescence quantum yields (PLQYs) of ∼70%, and superior stability. This work enlarges the surface chemistry engineering consideration of InP QDs and considerably promotes the development of efficient and stable optoelectronic devices.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Surface Passivation toward Multiple Inherent Dangling Bonds in Indium Phosphide Quantum Dots

Sun,

Hou,

Kong

et al. 2024

Inorg. Chem.

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“…QD displays [1][2][3][4][5][6][7][8][9][10]. By changing size, their spectra can cover the entire visible region.…”

Section: Introductionmentioning

confidence: 99%

High-brightness green InP-based QLEDs enabled by in-situ passivating core surface with zinc myristate

Cheng,

Li,

Chen

et al. 2024

Mater. Futures

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The performance of red InP and blue ZnTeSe-based quantum dots (QDs) and corresponding QD light emitting diodes (QLEDs) has already been improved significantly, whose external quantum efficiencies (EQEs) and luminances have exceeded 20% and 80,000 cd m-2, respectively. However, the inferior performance of the green InP-based device hinders the commercialization of full-color Cd-free QLED technology. The ease of oxidation of the highly reactive InP cores leads to high non-radiative recombination and poor photoluminescence quantum yield (PL QY) of the InP-based core/shell quantum dots (QDs), limiting the performance of the relevant QLEDs. Here, we proposed a fluoride-free synthesis strategy to in-situ passivate the InP cores, in which zinc myristate reacted with phosphine dangling bonds to form Zn-P protective layer and protect InP cores from the water and oxygen in the environment. The resultant InP/ZnSe/ZnS core/shell QDs demonstrated a high PL QY of 91%. The corresponding green-emitting electroluminescence devices exhibited a maximum EQE of 12.74%, along with a luminance of over 175,000 cd m-2 and a long T50@100 cd m-2 lifetime of over 20,000 h.

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“…As mentioned previously, this challenge is more dominant for far-red emissions at longer wavelengths, typically >640 nm. Recently, Huang et al prepared multishell InP/ZnSe/ZnSeS/ZnS QDs with a bright deep-red emission at 670 nm . However, the PL profile was quite broad, showing an fwhm of 66 nm, which further demonstrates the importance of reaching narrow emissions at the deep-red region for InP-based NCs.…”

Section: Introductionmentioning

confidence: 99%

Tuning the Shades of Red Emission in InP/ZnSe/ZnS Nanocrystals with Narrow Full Width for Fabrication of Light-Emitting Diodes

Soheyli,

Biçer,

Ozel

et al. 2023

ACS Omega

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While Cd-based luminescent nanocrystals (NCs) are the most mature NCs for fabricating efficient red light-emitting diodes (LEDs), their toxicity related limitation is inevitable, making it necessary to find a promising alternative. From this point of view, multishell-coated, red-emissive InP-based NCs are excellent luminescent nanomaterials for use as an emissive layer in electroluminescent (EL) devices. However, due to the presence of oxidation states, they suffer from a wide emission spectrum, which limits their performance. This study uses tris(dimethylamino)phosphine (3DMA-P) as a low-cost aminophosphine precursor and a double HF treatment to suggest an upscaled, cost-effective, and one-pot hot-injection synthesis of purely red-emissive InP-based NCs. The InP core structures were coated with thick layers of ZnSe and ZnS shells to prevent charge delocalization and to create a narrow size distribution. The purified NCs showed an intense emission signal as narrow as 43 nm across the entire red wavelength range (626–670 nm) with an emission quantum efficiency of 74% at 632 nm. The purified samples also showed an emission quantum efficiency of 60% for far-red wavelengths of 670 nm with a narrow full width of 50 nm. The samples showed a relatively long average emission lifetime of 50–70 ns with a biexponential decay profile. To demonstrate the practical ability of the prepared NCs in optoelectronics, we fabricated a red-emissive InP-based LEDs. The best-performing device showed an external quantum efficiency (EQE) of 1.16%, a luminance of 1039 cd m–2, and a current efficiency of 0.88 cd A–1.

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Deep‐Red InP Core‐Multishell Quantum Dots for Highly Bright and Efficient Light‐Emitting Diodes

Cited by 11 publications

References 62 publications

Surface Passivation toward Multiple Inherent Dangling Bonds in Indium Phosphide Quantum Dots

Surface Passivation toward Multiple Inherent Dangling Bonds in Indium Phosphide Quantum Dots

High-brightness green InP-based QLEDs enabled by in-situ passivating core surface with zinc myristate

Tuning the Shades of Red Emission in InP/ZnSe/ZnS Nanocrystals with Narrow Full Width for Fabrication of Light-Emitting Diodes

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