Deep Sub-Electron Read Noise in Image Sensors Using a Multigate-Source-Follower

Deng, W.; Fossum, Eric R.

doi:10.1109/ted.2022.3166723

Cited by 3 publications

(3 citation statements)

References 10 publications

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“…It has an N-P-N-N con guration, unlike typical P-I-N TFET. Also, there is a 50 nm oxide gap between the gate and ground contact to avoid interconnections interference 11 . Device parameters were appropriately adjusted to ensure reasonable comparison with CSF and BCSF under the set operating range and bias conditions.…”

Section: Device Structure and Mechanismmentioning

confidence: 99%

“…A common way to reduce 1/f noise is to move the current ow away from the interface traps. This is said to form buried channel (BC), and research has been conducted to apply it to NMOS, FinFET, multi-gate structure, and junction FET [7][8][9][10][11][12] . In the NMOS, the channel area is doped n-type to form BC, which is called buried channel SF (BCSF) [7][8][9] .…”

Section: Introductionmentioning

confidence: 99%

“…The BC effect can be ampli ed by using n sidewalls as potential barriers in FinFET structure 10 . Furthermore, BCSFs with multi-gate can be designed to achieve low 1/f noise while maintaining small gate areas 11 . These structures generally have a trade-off that gate control becomes more di cult as the current path moves away from the surface.…”

Section: Introductionmentioning

confidence: 99%

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New Tunneling Source Follower with Low 1/f Noise and High Voltage Gain

Kim,

Yoo

et al. 2024

Preprint

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We have designed a tunneling source follower (TSF) for image sensors that achieves high voltage gain (Av) and low 1/f noise simultaneously. The TSF is composed of N-P-N-N, especially the p-doped grounded area, which serves to amplify the insufficient tunneling current, allowing the source follower (SF) to utilize band-to-band tunneling (BTBT). Compared to thermionic emission, tunneling based structures contribute to increasing Av through lower channel length modulation and lower body effect. As a result, TSF achieves a higher Av (~1.0 V/V) than conventional SF (~0.9 V/V). Moreover, the n-doped channel makes the buried conductive channel farther from the interface, lowering the noise. The current noise spectral density (SI) is approximately 10 times lower in TSF than that of in conventional SF. Therefore, our TSF can be a possible candidate for High Av and low 1/f noise image sensors.

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Section: Device Structure and Mechanismmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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New Tunneling Source Follower with Low 1/f Noise and High Voltage Gain

Kim,

Yoo

et al. 2024

Preprint

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show abstract

New tunneling source follower with low 1/f noise and high voltage gain

Kim,

Choi

et al. 2024

Sci Rep

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We have designed a tunneling source follower (TSF) for image sensors that achieves high voltage gain ( A v ) and low 1/ f noise simultaneously. The TSF is composed of N-P-N-N, especially the p-doped grounded area, which serves to amplify the insufficient tunneling current, allowing the source follower (SF) to utilize band-to-band tunneling (BTBT). Compared to thermionic emission, tunneling based structures contribute to increasing A v through lower channel length modulation and lower body effect. As a result, TSF achieves a higher A v (~ 1.0 V/V) than conventional SF (~ 0.9 V/V). Moreover, the n-doped channel makes the buried conductive channel farther from the interface, lowering the noise. The input-referred voltage noise spectral density ( S V ) is approximately 10 times lower in TSF than that of in conventional SF. Therefore, our TSF can be a possible candidate for High A v and low 1/ f noise image sensors. Supplementary Information The online version contains supplementary material available at 10.1038/s41598-024-73501-w.

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Influence of Pixel Design on Charge Transfer in Pinned Photodiode CMOS Image Sensors

Liu

Yang

Yan

et al. 2023

J. Phys.: Conf. Ser.

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The influence of pixel design on charge transfer, mainly on potential barrier and potential pocket, is investigated in this paper. By simplifying the interface region between the pinned photodiode (PPD) and the transfer gate (TG), an intuitive and simple method for analyzing the potential barrier and pocket is presented. Through TCAD simulations, the validity of the analysis method is verified, and the influence of some key dimension and process parameters in PPD pixel design on the potential barrier and pocket is clarified. The whole study help improve the understanding of the charge transfer limitation mechanism, and can achieve high charge transfer efficiency and low image lag noise in the PPD pixel design of CMOS image sensors (CISs).

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Deep Sub-Electron Read Noise in Image Sensors Using a Multigate-Source-Follower

Cited by 3 publications

References 10 publications

New Tunneling Source Follower with Low 1/f Noise and High Voltage Gain

New Tunneling Source Follower with Low 1/f Noise and High Voltage Gain

New tunneling source follower with low 1/f noise and high voltage gain

Influence of Pixel Design on Charge Transfer in Pinned Photodiode CMOS Image Sensors

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