Deep-submicron drain current to radio frequency silicon on insulator metal oxide semiconductor field-effect transistor macromodel for designing microwave circuits

Abstract

A submicron radio frequency (RF) fully depleted silicon on insulator (SOI) metal oxide semiconductor field-effect transistor (MOSFET) macromodel based on a complete extrinsic small-signal equivalent circuit and an improved computer-aided design model for the intrinsic device is presented. Because the intrinsic device model is charge based, our RF SOI MOSFET model can be used in both small-and large-signal analyses. The present analytical model is used for successfully designing microwave oscillators at 5.8 and 12 GHz in deepsubmicron SOI complementary metal oxide semiconductor technology.