Deep-trap persistent materials for future rewriteable optical information storage

Jia, Chaoyang; Yu, Jia; Hu, YuanYuan; Wang, Xiaojun; Gao, Dangli

doi:10.1039/d4cp01547a

Phys. Chem. Chem. Phys.

2024

DOI: 10.1039/d4cp01547a

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Deep-trap persistent materials for future rewriteable optical information storage

Chaoyang Jia,

Jia Yu,

YuanYuan Hu

et al.

Abstract: Deep-trap persistent luminescence (PersL) materials with enriched traps, that allow the signs to quickly write-in and read-out with low-energy consumption, are one of the most promising materials for information storage....

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Cited by 2 publications

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Trap‐Engineering the Persistent Luminescence of Ca₃Ga₄O₉:Tb³⁺ via Al³⁺ Substitution for Optical Data Storage

Abeywickrama,

Guo,

Mao

2024

Advanced Optical Materials

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Optically stimulated luminescence (OSL) materials hold great potential for optical data storage (ODS) and anticounterfeiting applications. Nevertheless, the scarcity of suitable luminescent materials with deep‐level traps remains a significant obstacle. Herein, a host substation strategy have been employed to tune the persistent luminescence (PersL) and OSL properties of Ca3Ga4O9:Tb3+ by Al3+ substitution through trap engineering and demonstrated their potential. Specifically, the photoluminescence of the Ca2.985(Ga1‐y%Aly%)4O9:0.5%Tb3+ of Tb3+ is first investigated due to its different occupancies of Ca2+. The influence of host substitution on the crystal structure, trap depth, trap density, PersL, and OSL properties have further investigated. A series of strong PersL and OSL peaks from the Ca2.985(Ga1‐y%Aly%)4O9:0.5%Tb3+ with bluish‐green emissions have been observed. The Ca2.985(Ga1‐y%Aly%)4O9:0.5%Tb3+ have shown controllable photon release upon thermal and optical stimuli, enhancing their performance for ODS. Thermally stimulated luminescence suggests that vacancy and defect concentrations inside the Ca3‐x%(Ga1‐y%Aly%)4O9:x%Tb3+ can be manipulated by Tb3+ doping and Al3+ substitution, which ultimately leads to the formation of deep traps and a broad distribution of traps with increased deep trap concentration. The work demonstrates that trap engineering through Al3⁺ substitution is an effective method for tuning PersL and OSL properties of Ca2.985(Ga1‐y%Aly%)4O9:0.5%Tb3+ for ODS.

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Trap‐Engineering the Persistent Luminescence of Ca₃Ga₄O₉:Tb³⁺ via Al³⁺ Substitution for Optical Data Storage

Abeywickrama,

Guo,

Mao

2024

Advanced Optical Materials

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Cr³⁺‐Activated Deep Trap Electron‐Trapping Biphasic Mixture of Zn (Al,Ga)₂O₄ and Zn₂GeO₄ for Multilevel Information Storage by Trap Multiplexing and Wavelength Multiplexing

Wang,

Gao

et al. 2024

Luminescence

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Double wavelength emitting phosphors with hypersensitive thermal response are important for optical/thermal sensors and multiplexing optical data storage technology. However, it is a daunting challenge to develop multicolor electron‐trapping materials with superheat sensitivity and anomalous quenching luminescence characteristics for information storage. Here, based on the selection of host lattice and the control of doping ion types, we have designed Mn2+‐ and/or Cr3+‐activated persistent materials with excellent fluorescence properties. Among these phosphors, Mn,Cr co‐activated biphasic mixture exhibits not only sensitive anomalous thermosensitive fluorescence properties but also multicolor and multimode fluorescence emission characteristics derived from Mn and Cr simultaneously. The corresponding multimode fluorescence mechanism is proposed based on afterglow energy transfer and deepening trap effect. Especially, based on the excellent fluorescence performances, these phosphors as information storage medium demonstrate multilevel information storage by a combination of the trap multiplexing and wavelength multiplexing technologies. The study here provides not only the ideas for designing and synthesizing new electronic materials but also a material foundation for the fourth generation of optical information storage and encryption.

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Deep-trap persistent materials for future rewriteable optical information storage

Abstract: Deep-trap persistent luminescence (PersL) materials with enriched traps, that allow the signs to quickly write-in and read-out with low-energy consumption, are one of the most promising materials for information storage....

Cited by 2 publications

References 83 publications

Trap‐Engineering the Persistent Luminescence of Ca₃Ga₄O₉:Tb³⁺ via Al³⁺ Substitution for Optical Data Storage

Trap‐Engineering the Persistent Luminescence of Ca₃Ga₄O₉:Tb³⁺ via Al³⁺ Substitution for Optical Data Storage

Cr³⁺‐Activated Deep Trap Electron‐Trapping Biphasic Mixture of Zn (Al,Ga)₂O₄ and Zn₂GeO₄ for Multilevel Information Storage by Trap Multiplexing and Wavelength Multiplexing

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Deep-trap persistent materials for future rewriteable optical information storage

Abstract: Deep-trap persistent luminescence (PersL) materials with enriched traps, that allow the signs to quickly write-in and read-out with low-energy consumption, are one of the most promising materials for information storage....

Cited by 2 publications

References 83 publications

Trap‐Engineering the Persistent Luminescence of Ca3Ga4O9:Tb3+ via Al3+ Substitution for Optical Data Storage

Trap‐Engineering the Persistent Luminescence of Ca3Ga4O9:Tb3+ via Al3+ Substitution for Optical Data Storage

Cr3+‐Activated Deep Trap Electron‐Trapping Biphasic Mixture of Zn (Al,Ga)2O4 and Zn2GeO4 for Multilevel Information Storage by Trap Multiplexing and Wavelength Multiplexing

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Trap‐Engineering the Persistent Luminescence of Ca₃Ga₄O₉:Tb³⁺ via Al³⁺ Substitution for Optical Data Storage

Trap‐Engineering the Persistent Luminescence of Ca₃Ga₄O₉:Tb³⁺ via Al³⁺ Substitution for Optical Data Storage

Cr³⁺‐Activated Deep Trap Electron‐Trapping Biphasic Mixture of Zn (Al,Ga)₂O₄ and Zn₂GeO₄ for Multilevel Information Storage by Trap Multiplexing and Wavelength Multiplexing