Deep-trapping kinematics of charge carriers in amorphous semiconductors: A theoretical and experimental study

Kasap, S. O.; Aiyah, Viswanath; Polischuk, B.; Bhattacharyya, A.; Liang, Z.

doi:10.1103/physrevb.43.6691

Cited by 16 publications

(9 citation statements)

References 41 publications

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“…The relationship between μτ product and the residual potential has been evaluated by numerous authors (see, e.g. [9] and Refs. cited).…”

Section: Dark Discharge In A-sementioning

confidence: 99%

“…(1) has been found [8] to predict the actual μτ product remarkably well. The paper [9] identifies and critically examines the theoretical problems involved in the determination of μτ from xerographic measurements. It is found [9] that a single xerographic measurement in general cannot be used to accurately determine the μτ product.…”

Section: Introductionmentioning

confidence: 99%

“…The paper [9] identifies and critically examines the theoretical problems involved in the determination of μτ from xerographic measurements. It is found [9] that a single xerographic measurement in general cannot be used to accurately determine the μτ product. Xerographic measurements can be combined with conventional time-of-flight (TOF) [10,11] and interrupted-field time-of-flight (IFTOF) [12] techniques to check the measurement of the carrier range, and to calculate the deep trap capture radius.…”

Section: Introductionmentioning

confidence: 99%

“…Sequential steps in the xerographic experiment: corona charging to a voltage V 0 , exposure to step illumination and the measurement of remaining surface potential V R[9].…”

mentioning

confidence: 99%

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Xerographic spectroscopy of gap states in Se-rich amorphous semiconductors review

Mikla

2011

Journal of Non-Crystalline Solids

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“…The relationship between μτ product and the residual potential has been evaluated by numerous authors (see, e.g. [9] and Refs. cited).…”

Section: Dark Discharge In A-sementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…Sequential steps in the xerographic experiment: corona charging to a voltage V 0 , exposure to step illumination and the measurement of remaining surface potential V R[9].…”

mentioning

confidence: 99%

See 2 more Smart Citations

Xerographic spectroscopy of gap states in Se-rich amorphous semiconductors review

Mikla

2011

Journal of Non-Crystalline Solids

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“…Note that in the presence of shallow traps, the effective capture coefficient becomes C t θ . 17 The release time τ r is related to the…”

Section: Dark Current Modelmentioning

confidence: 99%

Modeling of dark current and ghosting in multilayer amorphous selenium x-ray detectors

Kabir¹,

Manouchehri²,

Mahmood³

et al. 2008

SPIE Proceedings

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A theoretical model for describing the bias-dependent transient behavior of dark current in multilayer amorphous selenium (a-Se) detectors has been developed by solving the trapping rate equations and Poisson's equation in the a-Se layer. The transient dark currents in these detectors are measured and the proposed dark model is compared with the measured data. The model shows a very good agreement with the experimental results. It has been found that the dark current is mainly controlled by the Schottky emission of holes from the metal/a-Se contact. The space charge build-up due to the hole injection and trapping in the blocking layer reduces the internal field at the metal/a-Se interface of positive side and thus the dark current eventually is limited by the space charge. It has been found that the electric fields at the metal contacts reduce to 20-30% of the applied field (applied voltage/thickness). The comparison of the model with the experimental data estimates some important properties (e.g., trap center concentrations, space charges, and effective barrier heights) of the blocking layers of the multilayer detectors. The dependence of the X-ray sensitivity of multilayer a-Se X-ray imaging detectors on repeated X-ray exposures is studied by considering accumulated trapped charges and their effects (trap filling, recombination, electric field profile, electric field dependent electron-hole pair creation), the carrier transport in the blocking layers, X-ray induced metastable deep trap center generations, and the effects of dark current. We simultaneously solve the continuity equations for both holes and electrons, trapping rate equations, and the Poisson's equation across the photoconductor for a step X-ray exposure by the Backward Euler finite difference method. The theoretical model shows a very good agreement with the experimental relative sensitivity versus cumulative X-ray exposure characteristics. The electric field distribution across the multilayer detector and the dark current density under repeated exposures are also estimated.

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Characterization of Transport Properties of Organic Semiconductors Using Impedance Spectroscopy

Takagi

Naito

2021

Organic Semiconductors for Optoelectronics

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Deep-trapping kinematics of charge carriers in amorphous semiconductors: A theoretical and experimental study

Cited by 16 publications

References 41 publications

Xerographic spectroscopy of gap states in Se-rich amorphous semiconductors review

Xerographic spectroscopy of gap states in Se-rich amorphous semiconductors review

Modeling of dark current and ghosting in multilayer amorphous selenium x-ray detectors

Characterization of Transport Properties of Organic Semiconductors Using Impedance Spectroscopy

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