Deep‐Ultraviolet LEDs Incorporated with SiO<sub>2</sub>‐Based Microcavities Toward High‐Speed Ultraviolet Light Communication

Yu, Huabin; Memon, Muhammad Hunain; Jia, Hongfeng; Ding, Yifan; Xiao, Shudan; Liu, Xin; Kang, Yang; Wang, Danhao; Zhang, Haochen; Fang, Shi; Gong, Chen; Xu, Zhengyuan; Ooi, Boon S.; Sun, Haiding

doi:10.1002/adom.202201738

Cited by 35 publications

(7 citation statements)

References 38 publications

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“…Group-III nitride semiconductor material (AlInGaN) is suitable for the fabrication of visible and ultraviolet (UV) light-emitting diodes (LEDs) because of its adjustable direct band gap ranging from 0.67 to 6.2 eV. − InGaN-based blue, green, yellow, orange, and red LEDs with wall-plug efficiencies of ∼78%, 56%, 33.7%, 30.1%, and 16.8% have been demonstrated, whereas the luminescence efficiencies of AlGaN-based UV LEDs with emission wavelengths below 360 nm remain low (i.e., a wall-plug efficiency under 10%) . The inferior performance of AlGaN-based UV LEDs hinders its applications in sterilization, high-resolution light sources, phototherapy, and photocatalysis .…”

Section: Introductionmentioning

confidence: 99%

Demonstration of Full AlGaN Tunnel Junction Ultraviolet LED

Deng,

Yu,

Niu

et al. 2024

ACS Photonics

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In this study, we have demonstrated the full AlGaN tunnel junction (TJ) ultraviolet light-emitting diode (UV LED). The TJ UV LED was grown on SiC substrates by metal−organic vapor phase epitaxy. The growth started with the n-Al 0.3 Ga 0.7 N cladding layer and then the TJ comprising a graded n-AlGaN layer, a thin undoped Al 0.8 Ga 0.2 N interlayer, and a graded p-AlGaN layer. Subsequently, the Al 0.2 Ga 0.8 N/Al 0.45 Ga 0.55 N quantum well active region and the topmost n-Al 0.3 Ga 0.7 N were grown. I−V measurements revealed that the device resistance and turn-on voltage of the TJ UV LED were significantly reduced compared with the reference UV LED, owing to enhanced hole injection and improved contact between the metal and topmost AlGaN. Electroluminescence measurements showed that the emission intensity of the TJ UV LED was enhanced by ∼2 times compared with the reference UV LED. This work demonstrates that full AlGaN TJ can be realized and is promising for high-performance lightemitting devices operating in the UV region.

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Section: Introductionmentioning

confidence: 99%

Demonstration of Full AlGaN Tunnel Junction Ultraviolet LED

Deng,

Yu,

Niu

et al. 2024

ACS Photonics

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“…The ultraviolet-C (UVC) wavelength is categorized from 200 nm to 280 nm [1,2] with applications in various sterilization fields such as food [3], water treatment [3,4], disinfection [3,5], communication [6,7] and medical sectors [4,[8][9][10]. The deep-ultraviolet light-emitting diode (DUV-LED) takes the stage in becoming primary light source for UV lighting replacing the harmful mercury-based UV lamp-source in which it offers several advantages such as the environmentally-friendly, long-life span, low-power consumption, and miniature design [3,4,11].…”

Section: Introductionmentioning

confidence: 99%

Low parasitic carrier reservoir of AlGaN-based DUV-LED via controlled-polarization step-graded superlattice electron blocking layer for high luminescence lighting

Hairol Aman,

Ahmad Noorden,

Daud

et al. 2024

Phys. Scr.

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Achieving high luminescence intensity of deep-ultraviolet light-emitting diode (DUV-LED) is generally performed through the implementation of electron blocking layer (EBL) on the chip’s epilayers. However, the issue of parasitic carrier reservoir that originated from the uncontrolled piezoelectric field polarization has restricted the performance of DUV-LED by reducing the radiative recombination in the active region. This work reports on the numerical computation analysis of the DUV-LED with different types of EBL designs which are reference EBL, conventional superlattice EBL and step-graded superlattice EBL. The analysis of the DUV-LED focuses on the band diagram, carrier concentration at the EBL interfaces, current density of the carrier in the active region, radiative recombination rates, and luminescence spectrum. Remarkably, it is found that the DUV-LED step-graded superlattice EBL provides the polarization-controlled band diagram and emits 272 nm UVC-wavelength in which it is superior in performance compared to the other structures, specifically in terms of its radiated intensity. The parasitic electron and hole reservoir have been reduced by 30% and 60%, respectively. The luminescence intensity was also enhanced by 11% compared with the reference EBL and the IQE obtained by the DUV-LED with step-graded superlattice EBL is 50.12%.

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“…The light emitting and optoelectronic devices fabricated based on III-nitrides offer a wide spectral range varying from near-infrared (InN) to deep ultraviolet (AlN) [1][2][3]. Remarkable progress has been reported on the research of InGaN-based green and red light-emitting diodes (LEDs) [4][5][6][7], AlGaN-based deep ultraviolet (DUV) LEDs [8,9], GaNbased ultraviolet photodetectors [10], and AlGaN-based solar-blind photodetectors [11]. High-bandwidth light communication could be achieved based on the above visible light and ultraviolet LEDs [9,12].…”

Section: Introductionmentioning

confidence: 99%

Effects of Buffer Layer on Structural Properties of Nonpolar (112¯0)-Plane GaN Film

Zhao

Suo

et al. 2023

Crystals

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Nonpolar (112¯0) a-plane GaN films were grown on semipolar (11¯02) r-plane sapphire substrates using various buffer layers within a low-pressure metal organic chemical vapor deposition system. The structural properties of nonpolar a-plane GaN films were intensively investigated by X-ray diffraction and Raman spectra measurements. A set of buffer layers were adopted from a GaN layer to a composite layer containing a multiple AlN layers and a gradually varied-Al-content AlGaN layer, the full width at half maximum of the X-ray rocking curves measured along the [0001] and [101¯0] directions of a-plane GaN were reduced by 35% and 37%, respectively. It was also found that the basal-plane stacking faults (BSFs) density can be effectively reduced by the heterogeneous interface introduced together with the composite buffer layer. An order of magnitude reduction in BSFs density, as low as 2.95 × 104 cm−1, and a pit-free surface morphology were achieved for the a-plane GaN film grown with the composite buffer layer, which is promising for the development of nonpolar GaN-based devices in the future.

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Deep‐Ultraviolet LEDs Incorporated with SiO₂‐Based Microcavities Toward High‐Speed Ultraviolet Light Communication

Abstract: The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adom.202201738.

Cited by 35 publications

References 38 publications

Demonstration of Full AlGaN Tunnel Junction Ultraviolet LED

Demonstration of Full AlGaN Tunnel Junction Ultraviolet LED

Low parasitic carrier reservoir of AlGaN-based DUV-LED via controlled-polarization step-graded superlattice electron blocking layer for high luminescence lighting

Effects of Buffer Layer on Structural Properties of Nonpolar (112¯0)-Plane GaN Film

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Deep‐Ultraviolet LEDs Incorporated with SiO2‐Based Microcavities Toward High‐Speed Ultraviolet Light Communication

Abstract: The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adom.202201738.

Cited by 35 publications

References 38 publications

Demonstration of Full AlGaN Tunnel Junction Ultraviolet LED

Demonstration of Full AlGaN Tunnel Junction Ultraviolet LED

Low parasitic carrier reservoir of AlGaN-based DUV-LED via controlled-polarization step-graded superlattice electron blocking layer for high luminescence lighting

Effects of Buffer Layer on Structural Properties of Nonpolar (112¯0)-Plane GaN Film

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Deep‐Ultraviolet LEDs Incorporated with SiO₂‐Based Microcavities Toward High‐Speed Ultraviolet Light Communication