Deep-Ultraviolet Luminescence of Rocksalt-Structured MgxZn1−xO (x &gt; 0.5) Films on MgO Substrates

Kaneko, Kentaro; Tsumura, Keiichi; Ishii, Kyohei; Onuma, Takayoshi; Honda, Toshio; Fujita, Shizυo

doi:10.1007/s11664-018-6303-9

Cited by 18 publications

(13 citation statements)

References 34 publications

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“…[1][2][3][4][5] So far, the sensitive layer materials for the conventional DUV photodetectors are the wide bandgap semiconductor films, such as AlGaN, 6 Ga 2 O 3 , [7][8][9][10][11] and MgZnO. 12 Unfortunately, the preparation processes for these films are often complicated and expensive, and the lattice mismatch between film and the substrate is often a concern for its application.…”

Section: Introductionmentioning

confidence: 99%

“…Owing to strong absorption by ozone and the atmosphere, deep ultraviolet (DUV) light (200–280 nm) in sunlight is difficult to reach the surface of the Earth. Therefore, DUV photodetectors are mainly used in satellites, missile-plume detection, and secure communications. − So far, the sensitive layer materials for the conventional DUV photodetectors are the wide band gap semiconductor films, such as AlGaN, Ga 2 O 3 , − and MgZnO . Unfortunately, the preparation processes for these films are often complicated and expensive, and the lattice mismatch between the film and the substrate is often a concern for its application.…”

Section: Introductionmentioning

confidence: 99%

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Ultrafast Photovoltaic-Type Deep Ultraviolet Photodetectors Using Hybrid Zero-/Two-Dimensional Heterojunctions

Kan¹,

Zheng

Lin

et al. 2019

ACS Appl. Mater. Interfaces

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Deep ultraviolet (DUV) photodetectors have wide-range applications in satellite communications, air purification and missile-plume detection. However, the critical barriers for the currently available wide-bandgap semiconductors films based DUV photodetectors are their low efficiency, complicated processes, and lattice mismatch with substrate. Quantum dots (QDs) devices prepared using solution based methods can solve these problems. However, so far, there are no any reports on Page 1 of 28 ACS Paragon Plus Environment ACS Applied Materials & Interfaces photovoltaic-type DUV photodetector using QDs. In this study, we propose a novel methodology to construct a hybrid Zero-/Two-dimensional DUV photodetector (p-type graphene/ZnS QDs/4H-SiC) with photovoltaic characteristics. The device exhibits excellent selectivity for DUV light and has an ultra-fast response speed (rise time: 28 μs and decay time: 0.75 ms), which are much better than those reported for conventional photoconductive photodetectors.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ultrafast Photovoltaic-Type Deep Ultraviolet Photodetectors Using Hybrid Zero-/Two-Dimensional Heterojunctions

Kan¹,

Zheng

Lin

et al. 2019

ACS Appl. Mater. Interfaces

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“…Recently, we have succeeded in growth of atomically flat RS-MgZnO thin films on MgO substrates by the mist chemical vapor deposition (mist CVD) method. [17][18][19] The epitaxial films exhibited cathodoluminescence (CL) peaks located in a range from 5.09 eV (4.91 eV) at 6 K (300 K) for x ¼ 0.61 to 6.24 eV (6.05 eV) at 6 K (300 K) for x ¼ 0.95. [15,[17][18][19][20] The energy difference between the E g and CL peak positions is defined as the Stokes-like shift.…”

mentioning

confidence: 99%

“…[17][18][19] The epitaxial films exhibited cathodoluminescence (CL) peaks located in a range from 5.09 eV (4.91 eV) at 6 K (300 K) for x ¼ 0.61 to 6.24 eV (6.05 eV) at 6 K (300 K) for x ¼ 0.95. [15,[17][18][19][20] The energy difference between the E g and CL peak positions is defined as the Stokes-like shift. The origin of the relatively large Stokes-like shift of 0.8-0.9 eV is a debatable issue.…”

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Vacuum Ultraviolet Emission Properties of Rocksalt‐Structured MgZnO Microcrystals Prepared on Quartz Glass Substrates

Kosaka

Hoshi

Kudo

et al. 2021

Physica Status Solidi (b)

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Deep ultraviolet (DUV) and vacuum ultraviolet (VUV) lights are expected to be utilized in various fields; such as virus inactivation, [1] ozone generator, [2] and nanofabrication. [3] Especially, DUV lights in an energy range from 5.6 to 6.0 eV (207 to 222 nm) are attracting special attention because of their capability for sterilization without harm to human tissues. [4,5] Furthermore, VUV lights in an energy range above 6.2 eV (below 200 nm) can effectively produce photochemical reactions. [6,7] So far, most of commercialized DUV and VUV light sources consist of either by discharge type lamps or AlGaNbased light emitting diodes (LEDs). [8,9] However, they still have disadvantages, that is, the discharge type lamps exhibit short lifetime, high energy consumption, and large size. For AlGaN-based LEDs, their bandgap energies E g are in a range 3.4 to 6.0 eV, and they cannot produce VUV lights. [10,11] Demands are thus increasing for developing semiconductor-based light emitters in a sub-200 nm range, because of their advantages such as miniaturization, long lifetime, and low energy consumption.To develop the light emitters covering widely in DUV and VUV spectral regions, we are focusing on rocksalt-structured (RS) MgZnO alloys. RS-Mg x Zn 1Àx O alloys can vary their E g by changing x in a range from 2.45 eV of RS-ZnO to 7.8 eV of RS-MgO, [12][13][14] though the rocksalt-structure is thermally stable for x > 0.6. The E g values for the RS-Mg x Zn 1Àx O have been determined by optical transmittance measurements [14,15] to be in a range from 5.73 eV for x ¼ 0.61 to 6.53 eV for x ¼ 0.92 at 300 K. According to the first-principles calculations, [15,16] the E g values for x > 0.6 correspond to the direct Γ-Γ transition. Recently, we have succeeded in growth of atomically flat RS-MgZnO thin films on MgO substrates by the mist chemical vapor deposition (mist CVD) method. [17][18][19] The epitaxial films exhibited cathodoluminescence (CL) peaks located in a range from 5.09 eV (4.91 eV) at 6 K (300 K) for x ¼ 0.61 to 6.24 eV (6.05 eV) at 6 K (300 K) for x ¼ 0.95. [15,[17][18][19][20] The energy difference between the E g and CL peak positions is defined as the Stokes-like shift. The origin of the relatively large Stokes-like shift of 0.8-0.9 eV is a debatable issue. Possible origin was attributed to the differences in the local arrangement of Mg and Zn atoms in the Mg x Zn 1Àx O alloy by virtue of the electronic structure calculation. [15] However, Gorczyca and coworkers have recently pointed out that the clustered Zn-O-Zn configurations result in an indirect bandgap for x > 0.5 by evaluating the unfolded electronic structures for different-sized supercells. [16] Though

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Removal and mineralization of toluene under VUV/UV lamp irradiation in humid air: Effect of light wavelength, O2 and H2O

Sun

Wang

2022

Arabian Journal of Chemistry

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Deep-Ultraviolet Luminescence of Rocksalt-Structured MgxZn1−xO (x > 0.5) Films on MgO Substrates

Cited by 18 publications

References 34 publications

Ultrafast Photovoltaic-Type Deep Ultraviolet Photodetectors Using Hybrid Zero-/Two-Dimensional Heterojunctions

Ultrafast Photovoltaic-Type Deep Ultraviolet Photodetectors Using Hybrid Zero-/Two-Dimensional Heterojunctions

Vacuum Ultraviolet Emission Properties of Rocksalt‐Structured MgZnO Microcrystals Prepared on Quartz Glass Substrates

Removal and mineralization of toluene under VUV/UV lamp irradiation in humid air: Effect of light wavelength, O2 and H2O

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