Deep-ultraviolet Schottky photodetectors with high deep-ultraviolet/visible rejection based on a ZnGa2O4 thin film

Tsai, Si Han; Yuan, Siming; Huang, Chiung Yi; Horng, Ray−Hua

doi:10.1016/j.apsusc.2019.143670

Cited by 46 publications

(22 citation statements)

References 22 publications

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“…ZnGa 2 O 4 is a wide-bandgap, conductive, chemically and thermally stable semiconductor. ZnGa 2 O 4 has received significant attention these days because it has potential applications in missile threat attention, solar-blind ultraviolet (UV) photodetectors (PDs), photocatalyst, UV radiation monitor in the environment, and lithography alignment [84,85]. UV photodetectors fabricated by using ZnGa 2 O 4 thin films are discussed here in detail.…”

Section: Applications Of Znga 2 Omentioning

confidence: 99%

“…With a bandgap of 4.4-5.0 eV, ZnGa 2 O 4 has potential to detect from violet to the near-UV region of the spectrum [87], even to deep-ultraviolet (DUV). An excellent DUV photodetector consists of properties such as low dark current, high responsivity, high quantum efficiency, fast response time, and high DUV-visible rejection ratio [85].…”

Section: Deep-ultraviolet Photodetectorsmentioning

confidence: 99%

“…Metal-semiconductor-metal (MSM) DUV photodetectors possess low dark current as well as excellent photoelectric characteristics [85]. When the active area is the same, the implementation of interdigitated electrodes in MSM photodetectors has resulted in a significant increase in bandwidth compared with standard conventional PIN photodiodes [88].…”

Section: Deep-ultraviolet Photodetectorsmentioning

confidence: 99%

“…MSM photodetectors possess low capacitance and have the potential for large-area detectors [89]. Therefore, MSM ZnGa 2 O 4 photodetectors in Reference [20,85,90,91] are taken into consideration. Their process parameters and optimized performances are listed in Tables 7 and 8, respectively.…”

Section: Deep-ultraviolet Photodetectorsmentioning

confidence: 99%

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Zinc Gallium Oxide—A Review from Synthesis to Applications

et al. 2020

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Spinel ZnGa2O4 has received significant attention from researchers due to its wide bandgap and high chemical and thermal stability; hence, paving the way for it to have potential in various applications. This review focuses on its physical, optical, mechanical and electrical properties, contributing to the better understanding of this material. The recent trends for growth techniques and processing in the research and development of ZnGa2O4 from bulk crystal growth to thin films are discussed in detail for device performance. This material has excellent properties and is investigated widely in deep-ultraviolet photodetectors, gas sensors and phosphors. In this article, effects of substrate temperature, annealing temperature, oxygen partial pressure and zinc/gallium ratio are discussed for device processing and fabrication. In addition, research progress and future outlooks are also identified.

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Section: Applications Of Znga 2 Omentioning

confidence: 99%

Section: Deep-ultraviolet Photodetectorsmentioning

confidence: 99%

Section: Deep-ultraviolet Photodetectorsmentioning

confidence: 99%

Section: Deep-ultraviolet Photodetectorsmentioning

confidence: 99%

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Zinc Gallium Oxide—A Review from Synthesis to Applications

et al. 2020

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“…The lattice constant is 8.334 Å at room temperature [1]. ZnGa 2 O 4 materials have recently gained increased attention [2,3]. These materials are widely applied in vacuum fluorescent and field emission displays, gas sensors, electronic devices, and solar-blind ultraviolet photodetectors (PDs) due to their high transparency in the deep ultraviolet (DUV) spectral region, excellent thermal and chemical stability, and wide optical band gap (~5 eV) [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Influence of Annealing Temperature on the Properties of ZnGa2O4 Thin Films by Magnetron Sputtering

et al. 2019

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Zinc gallate (ZnGa2O4) thin films were grown on sapphire (0001) substrate using radio frequency (RF) magnetron sputtering. After the thin film deposition process, the grown ZnGa2O4 was annealed at a temperature ranging from 500 to 900 °C at atmospheric conditions. The average crystallite size of the grown ZnGa2O4 thin films increased from 11.94 to 27.05 nm as the annealing temperature rose from 500 to 900 °C. Excess Ga released from ZnGa2O4 during thermal annealing treatment resulted in the appearance of a Ga2O3 phase. High-resolution transmission electron microscope image analysis revealed that the preferential crystallographic orientation of the well-arranged, quasi-single-crystalline ZnGa2O4 (111) plane lattice fringes were formed after the thermal annealing process. The effect of crystallite sizes and lattice strain on the width of the X-ray diffraction peak of the annealed ZnGa2O4 thin films were investigated using Williamson-Hall analysis. The results indicate that the crystalline quality of the deposited ZnGa2O4 thin film improved at higher annealing temperatures.

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A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Kaur

Kumar

2021

Advanced Optical Materials

302

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With the use of UV‐C radiation sterilizers on the rise in the wake of the recent pandemic, it has become imperative to have health safety systems in place to curb the ill‐effects on humans. This requires detection systems with suitable spectral response to the “invisible to the naked eye” radiation leaks with utmost sensitivity and swiftness. State of the art deep‐UV photodetectors based on the wide bandgap material gallium oxide have achieved responsivities up to few hundred A W−1 while the minimum response time achieved is few hundred nanoseconds. However, due to the trade‐off between these two key parameters, the ultimate performance of the photodetectors remains inadequate. The focus here is to give a thorough review of the gallium oxide based photodetectors, their recent progress and future prospects. This review highlights the fundamental physics and the key parameters such as dark current, responsivity, and response time with their dependence on the material properties. Exploration of the reasons behind current scenario in the field of gallium oxide is comprehensively and critically analyzed. The key challenges which limit device performance and inhibit the realization of real‐world practical detectors are also described. The lacunae currently plaguing the field is also discussed with possible remedial solutions.

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Deep-ultraviolet Schottky photodetectors with high deep-ultraviolet/visible rejection based on a ZnGa2O4 thin film

Cited by 46 publications

References 22 publications

Zinc Gallium Oxide—A Review from Synthesis to Applications

Zinc Gallium Oxide—A Review from Synthesis to Applications

Influence of Annealing Temperature on the Properties of ZnGa2O4 Thin Films by Magnetron Sputtering

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

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