2018
DOI: 10.1109/lpt.2018.2840224
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Deep UV Lithography Process in Generic InP Integration for Arrayed Waveguide Gratings

Abstract: DOI to the publisher's website. • The final author version and the galley proof are versions of the publication after peer review. • The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal… Show more

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Cited by 12 publications
(4 citation statements)
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“…Similar performance enhancement can be expected in InP photonics as the optical lithography processes for InP have moved from contact lithography and 245 nm lithography to a 193 nm scanner process. Recently the performance of AWGs in the generic InP platform was much improved by making use of an ASML 193 nm scanner lithography tool, which demonstrated patterning of lines down to 90 nm on an InP substrate [70].…”
Section: Deep Uv Scanner Lithographymentioning
confidence: 99%
“…Similar performance enhancement can be expected in InP photonics as the optical lithography processes for InP have moved from contact lithography and 245 nm lithography to a 193 nm scanner process. Recently the performance of AWGs in the generic InP platform was much improved by making use of an ASML 193 nm scanner lithography tool, which demonstrated patterning of lines down to 90 nm on an InP substrate [70].…”
Section: Deep Uv Scanner Lithographymentioning
confidence: 99%
“…In silicon photonics low surface roughness and excellent uniformity are achieved by state-of-the-art 193 nm optical lithography [1]. Recently we demonstrated low-excess-loss arrayed waveguide grating on a microphotonic InP platform [2]. We expect that the same methods will have a high impact on InP nanophotonics, where so far the losses have been limited to 2.5 dB/cm [3].…”
Section: Abstract-photonic Integrated Circuit; Propagation Loss; Machmentioning
confidence: 99%
“…The wafer is then exposed with an ASML PAS5500/1100B scanner lithography tool. This lithography tool is modified to be, to our knowledge, the only scanner in the world to expose features down to 100 nm with 15 nm overlay accuracy on 3" InP substrates at high speeds [2]. The pattern is first transferred to the silicon nitride hardmask, then to InP using a RIE process [3].…”
Section: Abstract-photonic Integrated Circuit; Propagation Loss; Machmentioning
confidence: 99%
“…This solution is relatively straightforward, it is used routinely in other material technologies such as silicon or silicon nitride [13][14][15]23]. Even though in this case the power coupling is more challenging to control, it can be realized with good critical dimension control as shown in [30]. By eliminating the MMI insertion losses with the use of a directional coupler and choosing a power coupling coefficient of 0.05 an improvement of the linewidth by an order of magnitude (green squares in Fig.…”
Section: Comparison Between Measured and Theoretical Linewidthmentioning
confidence: 99%