Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing Radiation

Vechten, J. A. Van; Zook, J. D.; Horning, R.D.; Goldenberg, B.

doi:10.1143/jjap.31.3662

Cited by 162 publications

(48 citation statements)

References 10 publications

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“…However, the electron irradiated sample shows a noticeable decrease in the CH 3 stretching mode. This clearly demonstrates that electron irradiation break up the CH 3 complex in good agreement with others [24,25]. There is an increase of the CH 2 and CH concentrations in the electron irradiated sample as seen from the increase in the area under the LVMs stretching modes.…”

Section: CVsupporting

confidence: 87%

Local Vibrational Modes of Carbon-Hydrogen Complexes in Proton Irradiated AlGaN

Manasreh

Weaver

2001

MRS Proc.

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Local vibrational modes (LVMs) of carbon-hydrogen (C-H) complexes in proton implanted AlGaN grown on sapphire by metalorganic chemical vapor deposition (MOCVD) were investigated using Fourier transform infrared (FTIR) spectroscopy. The LVMs exhibit five distinctive peaks in the spectral region of 2846-2963 cm-', which are due to the symmetric and asymmetric stretching modes of C-H. (n=1-3). The LVMs intensities in doped A1GaN are increased as irradiation dose is increased in the entire irradiation dose range used without reaching the saturation stage. On the other hand, undoped samples show that LVMs intensity increase then either decreased or saturated as the irradiation dose is increased above 5x10 16 cm. Proton irradiation causes a drastic increase in the CH 3 LVM while electron irradiation causes the opposite effect suggesting strongly that the observed LVMs are truly due to CH complexes.

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Section: CVsupporting

confidence: 87%

Local Vibrational Modes of Carbon-Hydrogen Complexes in Proton Irradiated AlGaN

Manasreh

Weaver

2001

MRS Proc.

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“…The same result could be obtained by annealing in hydrogen-free atmosphere, at the temperature exceeding 800 °C, the process invented by Nakamura et al [25,26]. It was proposed [27,28] that the Mg acceptor activation is related to removal of hydrogen, dissociating electrically inactive Mg-H complex. Such a behavior of Mg−H complex was confirmed by DFT calculations [29,30].…”

Section: Introductionsupporting

confidence: 62%

Review: GaN growth by ammonia based methods – density functional theory study

Krukowski¹,

Kempisty²,

Strąk³

2009

Cryst. Res. Technol.

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Key words gallium nitride, hydrogen vapor phase epitaxy, metal organic vapor phase epitaxy, density functional theory. PACS 61.50.Ah, 81.10.AjRecent results in Density Functional Theory (DFT) simulations of ammonia-based growth of gallium nitride on GaN (0001) are reviewed. These simulations are important to the following GaN growth methods that use ammonia as active nitrogen source: ammonothermal, MOVPE, HVPE and also ammonia-source MBE. In the simulations of GaN growth, the two main approaches were discussed: (1) equilibrium, based on chemical potentials of the components, and (2) dynamic, based on consideration of atomistic processes on the surface. These two approaches are unified by the kinetic procedure of determination of the chemical potential levels for nitrogen and hydrogen as a function of partial pressure of ammonia. Here the DFT modeling of GaN(0001) surface employing the technique of the simulation of subsurface electric field is described and employed. The results of DFT modeling include the ammonia and molecular hydrogen adsorption on GaN(0001) surface that allows to determine some basic features of ammonia-based growth of GaN. Dedicated to Prof. Wolfgang Neumann on the occasion of his 65th birthday

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“…Van Vechten et al [35] made a most interesting suggestion for taking some advantages of the presence of acceptor±hydrogen complexes and for avoiding self-compensation. They suggest that the presence of hydrogen increases the solubility of the acceptors and decreases the solubility of any donor.…”

Section: Observation By Pacs Of Cadmium±hydrogen Complexes In Ganmentioning

confidence: 99%