Defect and dopant depth profiles in boron-implanted silicon studied with channeling and nuclear reaction analysis

Vos, Maarten; Boerma, D.O.; Smulders, P.J.M.; Oosterhoff, S.

doi:10.1016/0168-583x(86)90062-5

Cited by 11 publications

(3 citation statements)

References 18 publications

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“…Experiments on the influence of UST on diffusion should be performed with light atoms. In this case only single point defects are created along the ion tracks without a significant overlap of damaged regions [12,13]. Our experiments with boron implantation under UST show that the removal of the most mobile interstitial atoms from the implanted region leads to decreasing densities of scattering centres (figure 4, curves 2 and 3).…”

Section: Discussionmentioning

confidence: 76%

Modification of the Si amorphization process byin situultrasonic treatment during ion implantation

Romanyuk¹,

Melnik²,

Olikh³

et al. 2001

Semicond. Sci. Technol.

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We report the first study of the effect of in situ ultrasound treatment (UST) during ion implantation on amorphization of crystalline silicon. Rutherford backscattering spectroscopy, ion channelling and cross-section transmission electron microscopy measurements show that amorphization of Si during Ar ion implantation is enhanced by UST, especially at ultrasound frequencies around 2 MHz. The influence on the amorphization process depends mainly on ion flux, ion masses and ultrasound frequency. For implantation conditions without amorphization, for example in the case of implantation with light atoms such as boron, defect concentrations are lower for wafers implanted with UST compared to reference wafers implanted without UST. The influence of ultrasound is discussed in terms of its interaction with point defects and ultrasound-stimulated enhanced diffusion of interstitials.

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Section: Discussionmentioning

confidence: 76%

Modification of the Si amorphization process byin situultrasonic treatment during ion implantation

Romanyuk¹,

Melnik²,

Olikh³

et al. 2001

Semicond. Sci. Technol.

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“…The size of these defects is ~10 nm and concentration is near 10 12 cm -2 . The dechanneling probability due to the dislocation loops which arise after implanted sample annealing, increases [8]. For implanted samples with US-treatment, the concentration of these defects is lower, because part of more mobile interstitials diffuses into bulk of silicon.…”

Section: Discussionmentioning

confidence: 99%

“…To estimate the cross section σ D (φ 1/2 ) one uses the Rutherford differential scattering cross section and integrates from φ 1/2 to ∞. It should also be noted that different procedures to determine the beam dechanneled fraction has been used in the work [8], where damage depth profile of B-implanted single crystals of silicon has been studied too. Fig.…”

Section: Methodsmentioning

confidence: 99%

Ultrasound effect on radiation damages in boron implanted silicon

Romanjuk¹

2000

Semicond. Phys. Quantum Electron. Optoelectron.

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The radiation defect distribution in boron implanted Si with and without ultrasound (US) treatment have been investigated. Obtained results have shown the significant influence of the in situ US treatment on the defect formation. The defect concentration decreases both in the as-implanted and post-annealed samples, implanted with US-treatment. The physical model of this effect, connecting it with stimulated diffusion of silicon interstitials under the US treatment have been proposed.

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Nuclear Reaction Analysis

Demortier

2000

Encyclopedia of Analytical Chemistry

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Nuclear reaction analysis (NRA) is one among the numerous analytical techniques involving the irradiation of a material with energetic particles. In NRA methods we exclude any remnant radioactivity together with interactions leading to the scattering of the incident particle only: this last procedure leads to RBS (Rutherford backscattering spectroscopy) and ERD (elastic recoil detection). In NRA the nature of the emitted particle used as an analytical signal is obviously different from that of the incident one. In order to avoid permanent radioactivity, the energy of the projectile is maintained at a sufficiently low value (below 6 MeV, easily available using a small accelerator). Consequently, due to the large coulomb barrier around heavy nuclei, only light nuclei may be easily identified (atomic mass less than or equal to 30). After discussing the kinematics and fundamentals of the interactions, we present examples of applications in material sciences, archaeological and biological materials.

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Defect and dopant depth profiles in boron-implanted silicon studied with channeling and nuclear reaction analysis

Cited by 11 publications

References 18 publications

Modification of the Si amorphization process byin situultrasonic treatment during ion implantation

Modification of the Si amorphization process byin situultrasonic treatment during ion implantation

Ultrasound effect on radiation damages in boron implanted silicon

Nuclear Reaction Analysis

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