Defect and structural imperfection effects on the electronic properties of BiTeI surfaces

Fiedler, Sebastian; El-Kareh, Lydia; Eremeev, S. V.; Tereshchenko, O. E.; Seibel, Christoph; Lutz, P.; Кох, К. А.; Chulkov, Evgueni V.; Кузнецова, Т. В.; Гребенников, В. И.; Bentmann, Hendrik; Bode, Matthias; Reinert, F.

doi:10.1088/1367-2630/16/7/075013

Cited by 23 publications

(51 citation statements)

References 46 publications

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“…Note that negative voltages refer to tunneling from the sample to the tip, thus reflecting the occupied DOS of the sample as being also accessed by ARPES spectra. Coexisting Te-and I-terminations are visible as reported earlier [20][21][22][23]. The outer part of the image shows the corresponding dI /dV map of the surface within the two white dashed lines.…”

Section: Resultssupporting

confidence: 67%

“…Surprisingly, for BiTeI only one cutoff could be observed in our spectra despite the presence of Teand I-terminated surface areas. The Te and I domains of BiTeI are in order of 100 nm [23] and maybe small enough to result in a mixed work function when measured by secondary electron cutoff technique. The corresponding work function of 5.2 eV is given in brackets in Table I and lies in between the values found for Te-and I-terminated surface areas by STM [22].…”

Section: Resultsmentioning

confidence: 99%

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Termination-dependent surface properties in the giant-Rashba semiconductorsBiTeX(X=Cl, Br, I)

et al. 2015

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The non-centrosymmetric semiconductors BiTeX (X = Cl, Br, I) show large Rashba-type spinorbit splittings in their electronic structure making them candidate materials for spin-based electronics. However, BiTeI(0001) single crystal surfaces usually consist of stacking-fault-induced domains of Te and I terminations implying a spatially inhomogeneous electronic structure. Here we combine scanning tunneling microscopy (STM), photoelectron spectroscopy (ARPES, XPS) and density functional theory (DFT) calculations to systematically investigate the structural and electronic properties of BiTeX (0001) surfaces. For X = Cl, Br we observe macroscopic single-terminated surfaces. We discuss chemical characteristics among the three materials in terms of bonding character, surface electronic structure, and surface morphology.

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Section: Resultssupporting

confidence: 67%

Section: Resultsmentioning

confidence: 99%

Termination-dependent surface properties in the giant-Rashba semiconductorsBiTeX(X=Cl, Br, I)

et al. 2015

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“…Similarly, an antisite atom A has been introduced in a layer B ( A B ) without leaving behind a vacancy in the layer A or creating the B A antisite which would correspond to the site exchange between atoms A and B . However, in the experimental situation the defects may be complex, as, e.g., a vacancy-antisite pair, proposed for the undoped BiTeI(0001) surface 35 . Moreover it is not excluded that other complex defects, which have not been observed for the undoped BiTeI case are enabled to form due to V doping.…”

Section: Introductionmentioning

confidence: 99%

Giant Magnetic Band Gap in the Rashba-Split Surface State of Vanadium-Doped BiTeI: A Combined Photoemission and Ab Initio Study

Климовских

Shikin

Otrokov

et al. 2017

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One of the most promising platforms for spintronics and topological quantum computation is the two-dimensional electron gas (2DEG) with strong spin-orbit interaction and out-of-plane ferromagnetism. In proximity to an s-wave superconductor, such 2DEG may be driven into a topologically non-trivial superconducting phase, predicted to support zero-energy Majorana fermion modes. Using angle-resolved photoemission spectroscopy and ab initio calculations, we study the 2DEG at the surface of the vanadium-doped polar semiconductor with a giant Rashba-type splitting, BiTeI. We show that the vanadium-induced magnetization in the 2DEG breaks time-reversal symmetry, lifting Kramers degeneracy of the Rashba-split surface state at the Brillouin zone center via formation of a huge gap of about 90 meV. As a result, the constant energy contour inside the gap consists of only one circle with spin-momentum locking. These findings reveal a great potential of the magnetically-doped semiconductors with a giant Rashba-type splitting for realization of novel states of matter.

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“…ARPES and structural investigations show that the surface electronic structure of BiTeI depends sensitively on the termination and extrinsic and intrinsic defects. Fiedler et al [87] point out that bulk stacking faults that invert the order of the stacking sequence can lead to two coexisting domains with different surface terminations. DFT calculations show that the Te-terminated surface of BiTeBr gives rise to a giant Rashba parameter of α ∼ 2 R eVÅ [86].…”

mentioning

confidence: 99%

Focus on the Rashba effect

2015

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The Rashba effect, discovered in 1959, continues to supply fertile ground for fundamental research and applications. It provided the basis for the proposal of the spin transistor by Datta and Das in 1990, which has largely inspired the broad and dynamic field of spintronics. More recent developments include new materials for the Rashba effect such as metal surfaces, interfaces and bulk materials. It has also given rise to new phenomena such as spin currents and the spin Hall effect, including its quantized version, which has led to the very active field of topological insulators. The Rashba effect plays a crucial role in yet more exotic fields of physics such as the search for Majorana fermions at semiconductorsuperconductor interfaces and the interaction of ultracold atomic Bose and Fermi gases. Advances in our understanding of Rashba-type spin-orbit couplings, both qualitatively and quantitatively, can be obtained in many different ways. This focus issue brings together the wide range of research activities on Rashba physics to further promote the development of our physical pictures and concepts in this field. The present Editorial gives a brief account on the history of the Rashba effect including material that was previously not easily accessible before summarizing the key results of the present focus issue as a guidance to the reader.

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Defect and structural imperfection effects on the electronic properties of BiTeI surfaces

Cited by 23 publications

References 46 publications

Termination-dependent surface properties in the giant-Rashba semiconductorsBiTeX(X=Cl, Br, I)

Termination-dependent surface properties in the giant-Rashba semiconductorsBiTeX(X=Cl, Br, I)

Giant Magnetic Band Gap in the Rashba-Split Surface State of Vanadium-Doped BiTeI: A Combined Photoemission and Ab Initio Study

Focus on the Rashba effect

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